Part Details for BLF881S,112 by Ampleon
Overview of BLF881S,112 by Ampleon
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BLF881S,112
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
568-7553-5-ND
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DigiKey | RF MOSFET LDMOS 50V SOT467B Min Qty: 1 Lead time: 16 Weeks Container: Tray |
51 In Stock |
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$142.4705 / $152.1100 | Buy Now |
|
DISTI #
BLF881S,112
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Avnet Americas | Power LDMOS Transistor N-Channel 104V 3-Pin SOT-467B Bulk - Rail/Tube (Alt: BLF881S,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$139.9992 / $163.3324 | Buy Now |
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Rochester Electronics | BLF881S - LDMOS RF Power Transistor RoHS: Compliant Status: Active Min Qty: 1 | 1 |
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$131.4700 / $154.6700 | Buy Now |
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DISTI #
BLF881S,112
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Avnet Americas | Power LDMOS Transistor N-Channel 104V 3-Pin SOT-467B Bulk - Rail/Tube (Alt: BLF881S,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$139.9992 / $163.3324 | Buy Now |
|
DISTI #
BLF881S,112
|
Avnet Americas | Power LDMOS Transistor N-Channel 104V 3-Pin SOT-467B Bulk - Rail/Tube (Alt: BLF881S,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$139.9992 / $163.3324 | Buy Now |
Part Details for BLF881S,112
BLF881S,112 CAD Models
BLF881S,112 Part Data Attributes
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BLF881S,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLF881S,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 104 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFP-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |