Part Details for BSB014N04LX3GXUMA1 by Infineon Technologies AG
Overview of BSB014N04LX3GXUMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSB014N04LX3GXUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y1246
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Newark | Mosfet, N-Ch, 40V, 180A, Mg-Wdson-2-2, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:180A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSB014N04LX3GXUMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
2617477
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element14 Asia-Pacific | MOSFET, N-CH, 40V, 180A, MG-WDSON-2-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.9100 / $2.0182 | Buy Now |
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DISTI #
2617477RL
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element14 Asia-Pacific | MOSFET, N-CH, 40V, 180A, MG-WDSON-2-2 RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.9100 / $1.3577 | Buy Now |
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DISTI #
2617477RL
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Farnell | MOSFET, N-CH, 40V, 180A, MG-WDSON-2-2 RoHS: Compliant Min Qty: 100 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$1.1414 / $1.4986 | Buy Now |
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DISTI #
2617477
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Farnell | MOSFET, N-CH, 40V, 180A, MG-WDSON-2-2 RoHS: Compliant Min Qty: 1 Lead time: 53 Weeks, 1 Days Container: Cut Tape | 0 |
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$1.1414 / $2.6225 | Buy Now |
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DISTI #
1775414
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Farnell | MOSFET, N CH, 180A, 40V, MG-WDSON-3 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each | 0 |
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$1.9981 / $4.4208 | Buy Now |
Part Details for BSB014N04LX3GXUMA1
BSB014N04LX3GXUMA1 CAD Models
BSB014N04LX3GXUMA1 Part Data Attributes
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BSB014N04LX3GXUMA1
Infineon Technologies AG
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Datasheet
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BSB014N04LX3GXUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | WDSON-2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | SILVER NICKEL | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSB014N04LX3GXUMA1
This table gives cross-reference parts and alternative options found for BSB014N04LX3GXUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSB014N04LX3GXUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC010N04LS | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSB014N04LX3GXUMA1 vs BSC010N04LS |
| BSC010N04LSTATMA1 | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSB014N04LX3GXUMA1 vs BSC010N04LSTATMA1 |
| BSC010N04LSI | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | Infineon Technologies AG | BSB014N04LX3GXUMA1 vs BSC010N04LSI |
| CSD18510Q5B | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSB014N04LX3GXUMA1 vs CSD18510Q5B |
| CSD18510Q5BT | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSB014N04LX3GXUMA1 vs CSD18510Q5BT |
| BSC010N04LSIATMA1 | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | Infineon Technologies AG | BSB014N04LX3GXUMA1 vs BSC010N04LSIATMA1 |