Part Details for BSB053N03LPG by Infineon Technologies AG
Overview of BSB053N03LPG by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BSB053N03LPG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSB053N03LPG-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 693 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
5000 In Stock |
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$0.4300 | Buy Now |
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Rochester Electronics | BSB053N03 - Power Field-Effect Transistor, 17A, 30V, 0.0053ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 5000 |
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$0.3719 / $0.4375 | Buy Now |
Part Details for BSB053N03LPG
BSB053N03LPG CAD Models
BSB053N03LPG Part Data Attributes
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BSB053N03LPG
Infineon Technologies AG
Buy Now
Datasheet
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BSB053N03LPG
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, METAL, WDSON-2, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.0053 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-MBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 284 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSB053N03LPG
This table gives cross-reference parts and alternative options found for BSB053N03LPG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSB053N03LPG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | BSB053N03LPG vs NTMFS4985NFT3G |
FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | BSB053N03LPG vs FDS7068SN3 |
RQ3E180AJTB | Power Field-Effect Transistor, 18A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HSMT8, 8 PIN | ROHM Semiconductor | BSB053N03LPG vs RQ3E180AJTB |
BSC043N03MSCGATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSB053N03LPG vs BSC043N03MSCGATMA1 |
QM3006D | Power Field-Effect Transistor, 17A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | UPI Semiconductor Corp | BSB053N03LPG vs QM3006D |
BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSB053N03LPG vs BSZ0904NSI |
BSZ0589NSATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8 | Infineon Technologies AG | BSB053N03LPG vs BSZ0589NSATMA1 |
NTTFS4985NFTWG | 16.3A, 30V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8 | onsemi | BSB053N03LPG vs NTTFS4985NFTWG |
FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | BSB053N03LPG vs FDMS8672S |
NTTFS4985NFTAG | Single N-Channel Power MOSFET 30V, 64A, 3.5mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | BSB053N03LPG vs NTTFS4985NFTAG |