Manufacturer
Infineon Technologies AG
Price Range
$1.6900 / $2.6200
Part Details
-
Manufacturer Part Number:
BSC010N04LS
-
Pbfree Code:
No
-
Rohs Code:
Yes
-
Part Life Cycle Code:
Active
-
Ihs Manufacturer:
INFINEON TECHNOLOGIES AG
-
Package Description:
SMALL OUTLINE, R-PDSO-F3
-
Reach Compliance Code:
not_compliant
-
ECCN Code:
EAR99
-
Manufacturer:
Infineon Technologies AG
-
Risk Rank:
1.75
-
Avalanche Energy Rating (Eas):
330 mJ
-
Case Connection:
DRAIN
-
Configuration:
SINGLE WITH BUILT-IN DIODE
-
DS Breakdown Voltage-Min:
40 V
-
Drain Current-Max (ID):
38 A
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Drain-source On Resistance-Max:
0.0013 Ω
-
FET Technology:
METAL-OXIDE SEMICONDUCTOR
-
JESD-30 Code:
R-PDSO-F3
-
JESD-609 Code:
e3
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Moisture Sensitivity Level:
1
-
Number of Elements:
1
-
Number of Terminals:
3
-
Operating Mode:
ENHANCEMENT MODE
-
Package Body Material:
PLASTIC/EPOXY
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Package Shape:
RECTANGULAR
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Package Style:
SMALL OUTLINE
-
Peak Reflow Temperature (Cel):
NOT SPECIFIED
-
Polarity/Channel Type:
N-CHANNEL
-
Pulsed Drain Current-Max (IDM):
400 A
-
Surface Mount:
YES
-
Terminal Finish:
Tin (Sn)
-
Terminal Form:
FLAT
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Terminal Position:
DUAL
-
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
-
Transistor Application:
SWITCHING
-
Transistor Element Material:
SILICON
CAD Models Information
Distributors with Stock
Total Inventory
18,820
- 1. Rutronik 10,050Buy Now
- 2. Wuhan P&S 4,900Buy Now
- 3. Chip 1 Exchange 3,400Buy Now
- 4. CoreStaff Co Ltd 470Buy Now
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC010N04LSATMA1 Transistors | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC010N04LS vs BSC010N04LSATMA1 |
| BSC010N04LSIATMA1 Transistors | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | Infineon Technologies AG | BSC010N04LS vs BSC010N04LSIATMA1 |
| BSB014N04LX3GXUMA1 Transistors | Power Field-Effect Transistor, 36A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 | Infineon Technologies AG | BSC010N04LS vs BSB014N04LX3GXUMA1 |
| BSC010N04LSTATMA1 Transistors | Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC010N04LS vs BSC010N04LSTATMA1 |
| BSC010N04LST Transistors | Power Field-Effect Transistor, | Infineon Technologies AG | BSC010N04LS vs BSC010N04LST |
| BSC010N04LSI Transistors | Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN | Infineon Technologies AG | BSC010N04LS vs BSC010N04LSI |
| CSD18510Q5B Transistors | 40V, N ch NexFET MOSFET™, single SON5x6, 0.96mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC010N04LS vs CSD18510Q5B |
| CSD18510Q5BT Transistors | 40V, N ch NexFET MOSFET™, single SON5x6, 0.96mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC010N04LS vs CSD18510Q5BT |
Global Popularity
237,495 of 3,262,357 parts
-0.02% change vs. last year- Top Global Parts
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Popularity in Transistors
7,586 of 39,580 parts
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Popularity in Power Field-Effect Transistors
2,751 of 16,542 parts
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- 7. PMDXB600UNEZ Nexperia
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- 9. JANTX2N6796 Microsemi Corporation
- 10. IRF5210STRLPBF Infineon Technologies AG
Popularity by Region
Estimated Price History
Estimated Stock History
Market Price Analysis
Datasheets & Reference Designs
Reference Designs
-
16.8V/18A 4 Switch Buck Boost Reference Design
PMP10214: The PMP10214 reference design has a wide input voltage range from 8 -16V DC with a surge capapbility to 40V. The topology is 4 switch buck boost. It is best suited for charging 4s Li-Ion starter batteries (4 cells).
