Datasheets
BSC010N04LSCATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 248A I(D), 40V, 0.00135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON, SOP-8

Part Details for BSC010N04LSCATMA1 by Infineon Technologies AG

Overview of BSC010N04LSCATMA1 by Infineon Technologies AG

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Price & Stock for BSC010N04LSCATMA1

Part # Distributor Description Stock Price Buy
DISTI # 38AJ3423
Newark Mosfet, N-Ch, 40V, 282A, Pg-Tdson Rohs Compliant: Yes |Infineon BSC010N04LSCATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $2.8200
  • 10 $2.5300
  • 25 $2.3900
  • 50 $2.2300
  • 100 $2.0700
  • 250 $1.9700
  • 500 $1.7700
  • 1,000 $1.4900
$1.4900 / $2.8200 Buy Now
DISTI # 448-BSC010N04LSCATMA1CT-ND
DigiKey MOSFET N-CH 40V 282A Min Qty: 1 Lead time: 97 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $2.7100
  • 10 $2.4300
  • 25 $2.2976
  • 100 $1.9912
  • 250 $1.8890
  • 500 $1.6950
  • 1,000 $1.4296
  • 2,500 $1.3581
  • 5,000 $1.3070
$1.3070 / $2.7100 Buy Now
DISTI # BSC010N04LSCATMA1
Avnet Americas DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSC010N04LSCATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
  • 5,000 $1.3480
  • 10,000 $1.3059
  • 20,000 $1.2637
  • 30,000 $1.2216
  • 40,000 $1.1795
$1.1795 / $1.3480 Buy Now
DISTI # 726-BSC010N04LSCATMA
Mouser Electronics MOSFET TRENCH <= 40V RoHS: Compliant 0
Order Now
Future Electronics OptiMOS 5 RoHS: Non Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $1.2900
$1.2900 Buy Now
Future Electronics OptiMOS 5 RoHS: Non Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $1.2900
$1.2900 Buy Now
DISTI # SP001695284
EBV Elektronik DIFFERENTIATED MOSFETS (Alt: SP001695284) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC010N04LSCATMA1

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BSC010N04LSCATMA1 Part Data Attributes

BSC010N04LSCATMA1 Infineon Technologies AG
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BSC010N04LSCATMA1 Infineon Technologies AG Power Field-Effect Transistor, 248A I(D), 40V, 0.00135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TDSON, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 330 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 248 A
Drain-source On Resistance-Max 0.00135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 320 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 139 W
Pulsed Drain Current-Max (IDM) 1128 A
Reference Standard IEC-61249-2-21; IEC-68-1
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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