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Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8326
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Newark | Mosfet, N-Ch, 40V, 100A, 150Deg C, 69W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC022N04LSATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2686 |
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$0.4670 | Buy Now |
DISTI #
86AK4427
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Newark | Mosfet, N-Ch, 40V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC022N04LSATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5840 / $0.5990 | Buy Now |
DISTI #
BSC022N04LSATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 100A TDSON-8-6 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16519 In Stock |
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$0.5610 / $2.0300 | Buy Now |
DISTI #
BSC022N04LSATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC022N04LSATMA1) RoHS: Compliant Min Qty: 558 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 5000 Partner Stock |
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$0.5563 / $0.6545 | Buy Now |
DISTI #
13AC8326
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Avnet Americas | Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 13AC8326) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 2686 Partner Stock |
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$0.9890 / $1.5400 | Buy Now |
DISTI #
BSC022N04LSATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC022N04LSATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
726-BSC022N04LSATMA1
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Mouser Electronics | MOSFETs N-Ch 40V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 45 |
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$0.5560 / $1.6500 | Buy Now |
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Future Electronics | Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 30000Reel |
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$0.5450 | Buy Now |
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Future Electronics | Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 5000Reel |
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$0.5450 | Buy Now |
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Rochester Electronics | BSC022N04LS - OptiMOS Power-MOSFET, 40V RoHS: Compliant Status: Active Min Qty: 1 | 5000 |
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$0.5563 / $0.6545 | Buy Now |
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BSC022N04LSATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC022N04LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 25 A | |
Drain-source On Resistance-Max | 0.0032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC022N04LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC022N04LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD18511Q5AT | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSONP -55 to 150 | Texas Instruments | BSC022N04LSATMA1 vs CSD18511Q5AT |
CSD18511Q5A | 40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSONP -55 to 150 | Texas Instruments | BSC022N04LSATMA1 vs CSD18511Q5A |
BSC022N04LS | Power Field-Effect Transistor, 25A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC022N04LSATMA1 vs BSC022N04LS |