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Part Details for BSC060N10NS3GATMA1 by Infineon Technologies AG
Overview of BSC060N10NS3GATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BSC060N10NS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
79X1333
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Newark | Mosfet, N-Ch, 100V, 90A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon BSC060N10NS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5044 |
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$1.4500 / $2.9700 | Buy Now |
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DISTI #
86AK4451
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Newark | Mosfet, N-Ch, 100V, 90A, Tdson Rohs Compliant: Yes |Infineon BSC060N10NS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3200 | Buy Now |
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DISTI #
BSC060N10NS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 14.9/90A 8TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9200 In Stock |
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$1.2461 / $2.8700 | Buy Now |
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DISTI #
BSC060N10NS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC060N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 15000 |
|
$1.0443 / $1.2853 | Buy Now |
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DISTI #
79X1333
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Avnet Americas | Transistor MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1333) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 5044 Partner Stock |
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$1.9700 / $2.9700 | Buy Now |
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DISTI #
726-BSC060N10NS3GATM
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Mouser Electronics | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 RoHS: Compliant | 1833 |
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$1.2400 / $2.8700 | Buy Now |
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Future Electronics | N-Channel 100 V 6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8 RoHS: Non Compliant pbFree: No Min Qty: 5000 Package Multiple: 5000 Container: Reel | 30000Reel |
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$0.7150 | Buy Now |
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Future Electronics | N-Channel 100 V 6 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8 RoHS: Non Compliant pbFree: No Min Qty: 5000 Package Multiple: 5000 Container: Reel | 15000Reel |
|
$1.2200 | Buy Now |
|
DISTI #
BSC060N10NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 14.9A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC060N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 15000 |
|
$1.0443 / $1.2853 | Buy Now |
|
DISTI #
79X1333
|
Avnet Americas | Transistor MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1333) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 5044 Partner Stock |
|
$1.9700 / $2.9700 | Buy Now |
Part Details for BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 CAD Models
BSC060N10NS3GATMA1 Part Data Attributes
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BSC060N10NS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC060N10NS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14.9 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC060N10NS3GATMA1
This table gives cross-reference parts and alternative options found for BSC060N10NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC060N10NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC060N10NS3G | Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC060N10NS3GATMA1 vs BSC060N10NS3G |