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Transistors Power Field-Effect Transistors BSC084P03NS3EGATMA1

BSC084P03NS3EGATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Overview of BSC084P03NS3EGATMA1 by Infineon Technologies AG

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Price & Stock for BSC084P03NS3EGATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Rochester Electronics BSC084P03 - 20V-250V P-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 66
  • 1 $0.5704
  • 25 $0.5590
  • 100 $0.5362
  • 500 $0.5134
  • 1,000 $0.4848
$0.4848 / $0.5704 Buy Now

CAD Models for BSC084P03NS3EGATMA1 by Infineon Technologies AG
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Part Data Attributes for BSC084P03NS3EGATMA1 by Infineon Technologies AG
Parametric Data

BSC084P03NS3EGATMA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TDSON-8
Pin Count
8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
52 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
105 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
14.9 A
Drain-source On Resistance-Max
0.0084 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
165 pF
JESD-30 Code
R-PDSO-N8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
69 W
Pulsed Drain Current-Max (IDM)
200 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
NO LEAD
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
62.2 ns
Turn-on Time-Max (ton)
224.9 ns
Want to compare parts?
  1. BSC084P03NS3EGATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
    VS

Alternate Parts for BSC084P03NS3EGATMA1

This table gives cross-reference parts and alternative options found for BSC084P03NS3EGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC084P03NS3EGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSC084P03NS3G Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3G
BSC084P03NS3GXT Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3GXT
BSC084P03NS3GATMA1 Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3GATMA1
BSC084P03NS3EG Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3EG
Part Number Description Manufacturer Compare
BSC080P03LSG Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC080P03LSG
BSC084P03NS3GATMA1 Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3GATMA1
BSC080P03LSGAUMA1 Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC080P03LSGAUMA1
BSC084P03NS3EG Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3EG
BSC084P03NS3G Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC084P03NS3EGATMA1 vs BSC084P03NS3G

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