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Datasheets
BSC100N06LS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BSC100N06LS3GATMA1 by Infineon Technologies AG

Results Overview of BSC100N06LS3GATMA1 by Infineon Technologies AG

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BSC100N06LS3GATMA1 Information

BSC100N06LS3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC100N06LS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47W3311
Newark Mosfet, N Channel, 60V, 50A, 8Tdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSC100N06LS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 7466
  • 1 $1.5500
  • 10 $1.0500
  • 100 $0.7720
  • 500 $0.6540
  • 1,000 $0.6100
  • 2,500 $0.6040
  • 10,000 $0.5450
$0.5450 / $1.5500 Buy Now
DISTI # BSC100N06LS3GATMA1
Avnet Americas Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: BSC100N06LS3GATMA1) COO: Malaysia RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 26 Weeks, 0 Days Container: Tape & Reel 50000
  • 5,000 $0.2889
  • 10,000 $0.2828
  • 20,000 $0.2788
  • 40,000 $0.2747
  • 80,000 $0.2687
$0.2687 / $0.2889 Buy Now
DISTI # 47W3311
Avnet Americas Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount - Bulk (Alt: 47W3311) COO: Malaysia RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 7466 Partner Stock
  • 1 $1.5800
  • 10 $1.0600
  • 100 $0.7710
  • 500 $0.6590
  • 1,000 $0.6090
  • 2,500 $0.6030
  • 10,000 $0.5530
$0.5530 / $1.5800 Buy Now
Bristol Electronics   1918
RFQ
DISTI # BSC100N06LS3GATMA1
TME Transistor: N-MOSFET, unipolar, 60V, 36A, Idm: 200A, 50W, PG-TDSON-8 Min Qty: 1 2561
  • 1 $1.2700
  • 10 $0.8790
  • 25 $0.7700
  • 100 $0.6320
  • 250 $0.5580
  • 500 $0.5080
  • 1,000 $0.4630
  • 2,000 $0.4250
  • 2,500 $0.4120
  • 5,000 $0.3780
$0.3780 / $1.2700 Buy Now
DISTI # BSC100N06LS3GATMA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 11733
  • 5 $1.1800
  • 10 $0.8120
  • 50 $0.7870
  • 100 $0.5720
  • 200 $0.5600
  • 500 $0.4620
  • 1,000 $0.3690
  • 5,000 $0.3300
$0.3300 / $1.1800 Buy Now
Chip Stock MOSFET,N-CH,60V,50A,8TDSON, TransistorPolarity:NChannel, ContinuousDrain 38500
RFQ
DISTI # SP000453664
EBV Elektronik Power MOSFET N Channel 60 V 55 A 10 Milliohms TDSON 8 Pins Surface Mount (Alt: SP000453664) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 27 Weeks, 0 Days EBV - 1035000
Buy Now
New Advantage Corporation Single N-Channel 60 V 10 mOhm 45 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 830000
  • 5,000 $0.5017
  • 830,000 $0.4631
$0.4631 / $0.5017 Buy Now
Win Source Electronics MOSFET N-CH 60V 50A TDSON-8 32170
  • 100 $0.5202
  • 210 $0.4867
  • 320 $0.4699
  • 460 $0.4363
  • 600 $0.4196
  • 745 $0.4028
$0.4028 / $0.5202 Buy Now

Part Details for BSC100N06LS3GATMA1

BSC100N06LS3GATMA1 CAD Models

  • Part Symbol

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  • Footprint

    pcb footprint

  • 3D Model

    2d presentation

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BSC100N06LS3GATMA1 Part Data Attributes

Parametric Data
BSC100N06LS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC100N06LS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Package Description Green, Plastic, Tdson-8
Pin Count 8
Reach Compliance Code Not Compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 22 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Polarity/Channel Type N-Channel
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Tin (Sn)
Terminal Form Flat
Terminal Position Dual
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for BSC100N06LS3GATMA1

This table gives cross-reference parts and alternative options found for BSC100N06LS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC100N06LS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC028N06LS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 100A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSC100N06LS3GATMA1 vs BSC028N06LS3G
BSC100N06LS3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSC100N06LS3GATMA1 vs BSC100N06LS3G
equivalents icon

BSC100N06LS3GATMA1 Related Parts

BSC100N06LS3GATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSC100N06LS3GATMA1 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).

  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.

  • The maximum allowed drain-source voltage (Vds) for the BSC100N06LS3GATMA1 is 60V.

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