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Transistors / Power Field-Effect Transistors / BSC160N15NS5ATMA1
Datasheets
BSC160N15NS5ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for BSC160N15NS5ATMA1 by Infineon Technologies AG

Results Overview of BSC160N15NS5ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

BSC160N15NS5ATMA1 Information

BSC160N15NS5ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSC160N15NS5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 43AC2205
Newark Mosfet, N-Ch, 150V, 56A, Tdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:56A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.0137Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.8V, Power Rohs Compliant: Yes |Infineon BSC160N15NS5ATMA1 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5538
  • 1 $2.5700
  • 10 $1.6300
  • 25 $1.5700
  • 50 $1.5000
$1.5000 / $2.5700 Buy Now
DISTI # 86AK4475
Newark Mosfet, N-Ch, 150V, 56A, Tdson Rohs Compliant: Yes |Infineon BSC160N15NS5ATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.4600
$1.4600 Buy Now
DISTI # BSC160N15NS5ATMA1
Avnet Americas Trans MOSFET N-CH 150V 36A 8-Pin TDSON EP - Tape and Reel (Alt: BSC160N15NS5ATMA1) COO: Austria RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 26 Weeks, 0 Days Container: Reel 2740
  • 5,000 $0.9562
  • 10,000 $0.9225
  • 20,000 $0.8916
  • 40,000 $0.8628
  • 80,000 $0.8359
$0.8359 / $0.9562 Buy Now
Bristol Electronics   Min Qty: 3 7257
  • 3 $2.4225
  • 10 $1.8169
  • 29 $1.5141
  • 101 $0.9084
  • 332 $0.8479
  • 886 $0.7994
$0.7994 / $2.4225 Buy Now
Bristol Electronics   Min Qty: 3 7
  • 3 $2.2500
$2.2500 Buy Now
Rochester Electronics Trench >=100V RoHS: Compliant Status: Active Min Qty: 1 4583
  • 100 $1.3600
  • 500 $1.2200
  • 1,000 $1.1300
  • 10,000 $1.0100
  • 100,000 $0.8432
$0.8432 / $1.3600 Buy Now
Ameya Holding Limited   1330
RFQ
DISTI # BSC160N15NS5ATMA1
IBS Electronics BSC160N15NS5 SERIES 150 V 56 A SMT N-CH OPTIMOS&#x99, 5 POWER-TRANSISTOR - SUPERSO-8 Min Qty: 5000 Package Multiple: 1 10000
  • 5,000 $1.7920
$1.7920 Buy Now
DISTI # TMOS1713
Rutronik N-CH 150V 56A 16mOhm TDSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel Stock DE - 50000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 5,000 $1.1600
  • 10,000 $1.0996
  • 15,000 $0.9330
  • 20,000 $0.8830
$0.8830 / $1.1600 Buy Now
DISTI # BSC160N15NS5ATMA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 19666
  • 1 $1.4100
  • 10 $1.2000
  • 50 $0.9430
$0.9430 / $1.4100 Buy Now
Chip Stock   15000
RFQ
DISTI # SP001181422
EBV Elektronik Trans MOSFET NCH 150V 36A 8Pin TDSON EP (Alt: SP001181422) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, Ship Today 100
RFQ
Win Source Electronics MOSFET N-CH 150V 56A TDSON 111200
  • 35 $1.8124
  • 80 $1.4872
  • 125 $1.4407
  • 170 $1.3942
  • 215 $1.3478
  • 290 $1.2084
$1.2084 / $1.8124 Buy Now

Part Details for BSC160N15NS5ATMA1

BSC160N15NS5ATMA1 CAD Models

  • Part Symbol

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  • Footprint

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  • 3D Model

    2d presentation

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BSC160N15NS5ATMA1 Part Data Attributes

Parametric Data
BSC160N15NS5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC160N15NS5ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Package Description Sop-8
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Avalanche Energy Rating (Eas) 43 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology Metal-Oxide Semiconductor
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode Enhancement Mode
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Polarity/Channel Type N-Channel
Pulsed Drain Current-Max (IDM) 224 A
Surface Mount Yes
Terminal Finish Tin (Sn)
Terminal Form Flat
Terminal Position Dual
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for BSC160N15NS5ATMA1

This table gives cross-reference parts and alternative options found for BSC160N15NS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC160N15NS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSC190N15NS3GATMA1 Infineon Technologies AG $1.1819 Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 BSC160N15NS5ATMA1 vs BSC190N15NS3GATMA1
SIR622DP-T1-GE3 Vishay Intertechnologies $1.2444 Power Field-Effect Transistor, BSC160N15NS5ATMA1 vs SIR622DP-T1-GE3
SIDR622DP-T1-GE3 Vishay Intertechnologies $1.7933 Power Field-Effect Transistor, 56.7A I(D), 150V, 0.0177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8DC, 8 PIN BSC160N15NS5ATMA1 vs SIDR622DP-T1-GE3
equivalents icon

BSC160N15NS5ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the BSC160N15NS5ATMA1 is 175°C, as specified in the datasheet.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via structure to dissipate heat efficiently.

  • The maximum current rating of the BSC160N15NS5ATMA1 is 160A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.

  • To protect the BSC160N15NS5ATMA1 from overvoltage and overcurrent, a suitable voltage clamp and current sense resistor should be used. Additionally, a fuse or a circuit breaker can be used to protect the device from excessive current.

  • The recommended gate drive voltage for the BSC160N15NS5ATMA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can reduce the device's on-state resistance, but may also increase the risk of gate oxide damage.

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