Part Details for BSC320N20NS3G by Infineon Technologies AG
Overview of BSC320N20NS3G by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for BSC320N20NS3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 36A I(D), 200V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4000 |
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$2.8185 / $5.6370 | Buy Now |
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LCSC | 200V 36A 32m10V36A 125W 4V90uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS | 2645 |
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$1.4772 / $2.7484 | Buy Now |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 6872 |
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$1.5400 / $2.1300 | Buy Now |
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Sense Electronic Company Limited | TSDSON-8 | 2000 |
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RFQ |
Part Details for BSC320N20NS3G
BSC320N20NS3G CAD Models
BSC320N20NS3G Part Data Attributes:
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BSC320N20NS3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC320N20NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 144 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC320N20NS3G
This table gives cross-reference parts and alternative options found for BSC320N20NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC320N20NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD320N20N3GATMA1 | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN | Infineon Technologies AG | BSC320N20NS3G vs IPD320N20N3GATMA1 |
| TPH2900ENH | Power MOSFET - Nch 150V<VDSS≤250V | Toshiba America Electronic Components | BSC320N20NS3G vs TPH2900ENH |
| IPB320N20N3G | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BSC320N20NS3G vs IPB320N20N3G |
| IPB320N20N3GATMA1 | Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | BSC320N20NS3G vs IPB320N20N3GATMA1 |