Part Details for BSF050N03LQ3G by Infineon Technologies AG
Overview of BSF050N03LQ3G by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSF050N03LQ3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSF050N03LQ3G-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 770 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
14925 In Stock |
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$0.3900 | Buy Now |
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Rochester Electronics | BSF050N03 - Power Field-Effect Transistor, 15A, 30V, 0.007ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 34925 |
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$0.3347 / $0.3938 | Buy Now |
Part Details for BSF050N03LQ3G
BSF050N03LQ3G CAD Models
BSF050N03LQ3G Part Data Attributes:
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BSF050N03LQ3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSF050N03LQ3G
Infineon Technologies AG
Power Field-Effect Transistor, 15A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, METAL, WDSON-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-MBCC-N2 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSF050N03LQ3G
This table gives cross-reference parts and alternative options found for BSF050N03LQ3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSF050N03LQ3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSF050N03LQ3GXUMA1 | Power Field-Effect Transistor, 15A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2 | Infineon Technologies AG | BSF050N03LQ3G vs BSF050N03LQ3GXUMA1 |