Part Details for BSM200GA170DN2 by Siemens
Overview of BSM200GA170DN2 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM200GA170DN2
BSM200GA170DN2 CAD Models
BSM200GA170DN2 Part Data Attributes:
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BSM200GA170DN2
Siemens
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Datasheet
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BSM200GA170DN2
Siemens
Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES, N-Channel
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SIEMENS A G | |
| Package Description | FLANGE MOUNT, R-CUFM-X5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 290 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 160 ns | |
| Gate-Emitter Thr Voltage-Max | 6.2 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-CUFM-X5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1750 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 400 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | GENERAL PURPOSE | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 1800 ns | |
| Turn-off Time-Nom (toff) | 1250 ns | |
| Turn-on Time-Max (ton) | 1000 ns | |
| Turn-on Time-Nom (ton) | 530 ns | |
| VCEsat-Max | 3.9 V |
Alternate Parts for BSM200GA170DN2
This table gives cross-reference parts and alternative options found for BSM200GA170DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GA170DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM300GA170DN2E3166 | Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel | Siemens | BSM200GA170DN2 vs BSM300GA170DN2E3166 |
| BSM200GB170DLC | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, | Infineon Technologies AG | BSM200GA170DN2 vs BSM200GB170DLC |
| BSM150GB170DL | Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | BSM200GA170DN2 vs BSM150GB170DL |
| BSM200GB170DL | Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | BSM200GA170DN2 vs BSM200GB170DL |
| CM400HA-34H | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-4 | Mitsubishi Electric | BSM200GA170DN2 vs CM400HA-34H |
| FF150R17KE4HOSA1 | Insulated Gate Bipolar Transistor, 250A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GA170DN2 vs FF150R17KE4HOSA1 |
| BSM100GB170DLC | Insulated Gate Bipolar Transistor, 200A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GA170DN2 vs BSM100GB170DLC |
| BSM200GA170DN2S | Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES, N-Channel | Siemens | BSM200GA170DN2 vs BSM200GA170DN2S |
| FF200R17KE4HOSA1 | Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GA170DN2 vs FF200R17KE4HOSA1 |
| BSM150GB170DLCHOSA1 | Insulated Gate Bipolar Transistor, 300A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GA170DN2 vs BSM150GB170DLCHOSA1 |