Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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BSN10A Philips SemiconductorsBuy Now Datasheet |
Compare Parts:BSN10A Philips Semiconductors Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | Single | |
Drain Current-Max (Abs) (ID) | 0.175 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.83 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |