Part Details for BSP125E6433 by Siemens
Overview of BSP125E6433 by Siemens
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- Part Data Attributes: (Available)
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Energy and Power Systems
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Part Details for BSP125E6433
BSP125E6433 CAD Models
BSP125E6433 Part Data Attributes
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BSP125E6433
Siemens
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Datasheet
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BSP125E6433
Siemens
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 0.12 A | |
Drain-source On Resistance-Max | 45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 0.48 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |