Part Details for BSP125H6433XTMA1 by Infineon Technologies AG
Overview of BSP125H6433XTMA1 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSP125H6433XTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1381
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Newark | Mosfet, N-Ch, 600V, 0.12A, 150Deg C/1.8W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:120Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V Rohs Compliant: Yes |Infineon BSP125H6433XTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 13769 |
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$0.8590 | Buy Now |
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DISTI #
86AK4500
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Newark | Mosfet, N-Ch, 600V, 0.12A, Sot-223 Rohs Compliant: Yes |Infineon BSP125H6433XTMA1 RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3530 | Buy Now |
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DISTI #
BSP125H6433XTMA1CT-ND
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DigiKey | MOSFET N-CH 600V 120MA SOT223-4 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7247 In Stock |
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$0.2561 / $1.1500 | Buy Now |
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DISTI #
BSP125H6433XTMA1
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Avnet Americas | Transistor MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP125H6433XTMA1) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
34AC1381
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Avnet Americas | Transistor MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 34AC1381) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 0 |
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RFQ | |
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DISTI #
726-BSP125H6433XTMA1
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Mouser Electronics | MOSFETs N-Ch 600V 120mA SOT-223-3 RoHS: Compliant | 22322 |
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$0.2560 / $0.8700 | Buy Now |
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Future Electronics | N-Channel 600 V 120 mA 1.8 W SMT SIPMOS Power-Transistor PG-SOT223-4 RoHS: Compliant pbFree: No Min Qty: 4000 Package Multiple: 4000 Lead time: 20 Weeks Container: Reel | 12000Reel |
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$0.2400 / $0.2500 | Buy Now |
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Future Electronics | N-Channel 600 V 120 mA 1.8 W SMT SIPMOS Power-Transistor PG-SOT223-4 RoHS: Compliant pbFree: No Min Qty: 4000 Package Multiple: 4000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$0.2500 / $0.2600 | Buy Now |
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DISTI #
C1S322001140492
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes | 4000 |
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$0.2743 | Buy Now |
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DISTI #
C1S322001057767
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 3985 |
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$0.3100 / $0.4040 | Buy Now |
Part Details for BSP125H6433XTMA1
BSP125H6433XTMA1 CAD Models
BSP125H6433XTMA1 Part Data Attributes
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BSP125H6433XTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSP125H6433XTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.12 A | |
| Drain-source On Resistance-Max | 45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 0.48 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSP125H6433XTMA1
This table gives cross-reference parts and alternative options found for BSP125H6433XTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP125H6433XTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP125H6433 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP125H6433XTMA1 vs BSP125H6433 |