BSP129H6327
Infineon Technologies AG
Description: Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Overview of BSP129H6327 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Audio and Video Systems Automotive

Price & Stock for BSP129H6327 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
ComSIT USA SIPMOS SMALL SIGNAL TRANSISTOR Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 455
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
LCSC 240V 350mA 610V350mA 1.8W 1V108uA 1 N-Channel SOT-223-4 MOSFETs ROHS 948
  • 1 $0.5707
  • 10 $0.4777
  • 30 $0.4304
  • 100 $0.3847
  • 500 $0.2901
  • 1,000 $0.2759
$0.2759 / $0.5707 Buy Now
Win Source Electronics   50000
  • 23 $2.2610
  • 54 $1.8560
  • 84 $1.7980
  • 115 $1.7400
  • 149 $1.6820
  • 199 $1.5080
$1.5080 / $2.2610 Buy Now

CAD Models for BSP129H6327 by Infineon Technologies AG
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Part Data Attributes for BSP129H6327 by Infineon Technologies AG

BSP129H6327
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
GREEN, PLASTIC PACKAGE-4
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
240 V
Drain Current-Max (ID)
0.35 A
Drain-source On Resistance-Max
20 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
1.4 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Want to compare parts?
  1. BSP129H6327
    Infineon Technologies AG
    Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
    VS

Alternate Parts for BSP129H6327

This table gives cross-reference parts and alternative options found for BSP129H6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP129H6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSP129H6327XTSA1 Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP129H6327 vs BSP129H6327XTSA1

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