Part Details for BSP315E6433 by Siemens
Overview of BSP315E6433 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSP315E6433
BSP315E6433 CAD Models
BSP315E6433 Part Data Attributes
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BSP315E6433
Siemens
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Datasheet
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BSP315E6433
Siemens
Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 1.1 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 4.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP315E6433
This table gives cross-reference parts and alternative options found for BSP315E6433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP315E6433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP315E-6327 | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Siemens | BSP315E6433 vs BSP315E-6327 |
BSP315 | Power Field-Effect Transistor, 1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | BSP315E6433 vs BSP315 |
BSP315E6433 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP315E6433 vs BSP315E6433 |
BSP315E6327 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP315E6433 vs BSP315E6327 |
BSP315 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP315E6433 vs BSP315 |
BSP315E6327 | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP315E6433 vs BSP315E6327 |