Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
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Distributor | Stock | Package | QTY Break / Prices |
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6,530 |
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10,690 |
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BSP52E6327 Infineon Technologies AGBuy Now Datasheet |
Compare Parts:BSP52E6327 Infineon Technologies AG Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
Source Content uid | BSP52E6327 | |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 2000 | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 1.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
Turn-off Time-Max (toff) | 1500 ns | |
Turn-on Time-Max (ton) | 400 ns |
This table gives cross-reference parts and alternative options found for BSP52E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP52E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP52E6327XT Transistors | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, SOT-223, 4 PIN | Siemens | BSP52E6327 vs BSP52E6327XT |
BSP52T1 Transistors | 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA | Motorola Mobility LLC | BSP52E6327 vs BSP52T1 |
BSP52,115 Transistors | BSP50; BSP51; BSP52 - NPN Darlington transistors SC-73 4-Pin | NXP Semiconductors | BSP52E6327 vs BSP52,115 |
BSP52T/R Transistors | Transistor | Philips Semiconductors | BSP52E6327 vs BSP52T/R |
BSP52T3 Transistors | TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN, BIP General Purpose Small Signal | onsemi | BSP52E6327 vs BSP52T3 |
BSP52E6327HTSA1 Transistors | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP52E6327 vs BSP52E6327HTSA1 |