Part Details for BSP613PH6327 by Infineon Technologies AG
Overview of BSP613PH6327 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP613PH6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 132 |
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DISTI #
SMC-BSP613PH6327
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1333 |
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RFQ |
Part Details for BSP613PH6327
BSP613PH6327 CAD Models
BSP613PH6327 Part Data Attributes
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BSP613PH6327
Infineon Technologies AG
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Datasheet
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BSP613PH6327
Infineon Technologies AG
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.9 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 120 pF | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 1.8 W | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 11.6 A | |
Reference Standard | AEC-Q101; IEC-61249-2-21; IEC-68-1 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 71 ns | |
Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for BSP613PH6327
This table gives cross-reference parts and alternative options found for BSP613PH6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP613PH6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP613PH6327XTSA1 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP613PH6327 vs BSP613PH6327XTSA1 |
BSP613PL6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP613PH6327 vs BSP613PL6327 |
BSP613L6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | BSP613PH6327 vs BSP613L6327 |
ZXMP6A17GQTC | Power Field-Effect Transistor, | Diodes Incorporated | BSP613PH6327 vs ZXMP6A17GQTC |