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Part Details for BSZ014NE2LS5IFATMA1 by Infineon Technologies AG
Results Overview of BSZ014NE2LS5IFATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
BSZ014NE2LS5IFATMA1 Information
BSZ014NE2LS5IFATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ014NE2LS5IFATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8780
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Newark | Mosfet, N-Ch, 25V, 40A, 150Deg C, 69W, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSZ014NE2LS5IFATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 105 |
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$0.2810 | Buy Now |
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DISTI #
39AH8780
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Avnet Americas | Trans MOSFET N-CH 25V 40A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 39AH8780) COO: Austria RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 105 Partner Stock |
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$1.1500 / $1.4900 | Buy Now |
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DISTI #
BSZ014NE2LS5IFATMA1
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Avnet Americas | Trans MOSFET N-CH 25V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ014NE2LS5IFATMA1) COO: Austria RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.6691 / $0.7647 | Buy Now |
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Bristol Electronics | 50 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 31A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 | 5741 |
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$0.5635 / $0.9089 | Buy Now |
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DISTI #
BSZ014NE2LS5IFATMA1
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 300 |
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$0.5240 / $0.5420 | Buy Now |
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Chip Stock | SingleN-Channel25V1.45mOhm23nCOptiMOS™PowerMosfet-TSDSON-8FL | 31920 |
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RFQ | |
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DISTI #
SP001258924
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EBV Elektronik | Trans MOSFET NCH 25V 40A 8Pin TSDSON TR (Alt: SP001258924) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 25V 31A/40A TSDSON | 30330 |
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$1.0058 / $1.5087 | Buy Now |
Part Details for BSZ014NE2LS5IFATMA1
BSZ014NE2LS5IFATMA1 CAD Models
BSZ014NE2LS5IFATMA1 Part Data Attributes
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BSZ014NE2LS5IFATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ014NE2LS5IFATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Tsdson-8fl, 8 Pin | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 80 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.0021 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Square | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for BSZ014NE2LS5IFATMA1
This table gives cross-reference parts and alternative options found for BSZ014NE2LS5IFATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ014NE2LS5IFATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC014NE2LSIATMA1 | Infineon Technologies AG | $0.7155 | Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | BSZ014NE2LS5IFATMA1 vs BSC014NE2LSIATMA1 |
| FDMS2508SDC | Fairchild Semiconductor Corporation | Check for Price | N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM, 3000/TAPE REEL | BSZ014NE2LS5IFATMA1 vs FDMS2508SDC |
| BSB013NE2LXIXUMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-3 | BSZ014NE2LS5IFATMA1 vs BSB013NE2LXIXUMA1 |
| AP1004CMX | Advanced Power Electronics Corp | Check for Price | TRANSISTOR 32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, GREENFET PACKAGE-3, FET General Purpose Power | BSZ014NE2LS5IFATMA1 vs AP1004CMX |
| BSZ014NE2LS5IF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN | BSZ014NE2LS5IFATMA1 vs BSZ014NE2LS5IF |
BSZ014NE2LS5IFATMA1 Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat efficiently.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider using a heat sink or fan for additional cooling.
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The critical parameters to monitor for fault detection and protection include over-temperature, over-current, and under-voltage conditions. Implementing a monitoring circuit or using a dedicated fault detection IC can help detect these conditions and prevent damage to the device.
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To optimize the gate driver circuit for efficient switching, ensure that the gate driver IC is properly selected, the gate resistance is minimized, and the PCB layout is optimized for low inductance and high-frequency signal integrity.
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The recommended ESD protection measures for this device include using ESD protection diodes, following proper handling and storage procedures, and implementing ESD protection circuits in the system design.