There are no models available for this part yet.
Overview of BSZ023N04LSATMA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CAD Models for BSZ023N04LSATMA1 by Infineon Technologies AG
Part Data Attributes for BSZ023N04LSATMA1 by Infineon Technologies AG
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
SMALL OUTLINE, S-PDSO-F3
|
Pin Count
|
8
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas)
|
130 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
40 V
|
Drain Current-Max (ID)
|
22 A
|
Drain-source On Resistance-Max
|
0.0032 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
S-PDSO-F8
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
8
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
SQUARE
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
69 W
|
Pulsed Drain Current-Max (IDM)
|
160 A
|
Surface Mount
|
YES
|
Terminal Form
|
FLAT
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for BSZ023N04LSATMA1
This table gives cross-reference parts and alternative options found for BSZ023N04LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ023N04LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSZ025N04LS | Power Field-Effect Transistor, 22A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN | Infineon Technologies AG | BSZ023N04LSATMA1 vs BSZ025N04LS |
FDI8442_F085 | Power Field-Effect Transistor, 23A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | BSZ023N04LSATMA1 vs FDI8442_F085 |
BSC030N04NSG | Power Field-Effect Transistor, 23A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSZ023N04LSATMA1 vs BSC030N04NSG |
BSC030N04NSGATMA1 | Power Field-Effect Transistor, 23A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSZ023N04LSATMA1 vs BSC030N04NSGATMA1 |
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