Part Details for BSZ040N04LSGATMA1 by Infineon Technologies AG
Overview of BSZ040N04LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ040N04LSGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2530
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Newark | Mosfet, N Ch, 40A, 40V, Pg-Tsdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0033Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:-, Power Rohs Compliant: Yes |Infineon BSZ040N04LSGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 343 |
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$0.5130 / $1.1600 | Buy Now |
DISTI #
BSZ040N04LSGATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 18A/40A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6669 In Stock |
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$0.4215 / $1.6500 | Buy Now |
DISTI #
BSZ040N04LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 18A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ040N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
726-BSZ040N04LSGATMA
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Mouser Electronics | MOSFETs N-Ch 40V 40A TSDSON-8 OptiMOS 3 RoHS: Compliant | 9920 |
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$0.4210 / $1.3300 | Buy Now |
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Future Electronics | Single N-Channel 40 V 4 mOhm 48 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 10000Reel |
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$0.4100 / $0.4250 | Buy Now |
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Future Electronics | Single N-Channel 40 V 4 mOhm 48 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel | 5000Reel |
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$0.4100 / $0.4250 | Buy Now |
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Future Electronics | Single N-Channel 40 V 4 mOhm 48 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.4100 / $0.4250 | Buy Now |
DISTI #
BSZ040N04LSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 40V, 40A, 69W, PG-TSDSON-8 Min Qty: 1 | 3254 |
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$0.5510 / $1.0910 | Buy Now |
DISTI #
C1S322000464766
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Chip1Stop | Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP T/R RoHS: Compliant | 20000 |
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$0.3847 / $0.3874 | Buy Now |
DISTI #
C1S322000278080
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 4750 |
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$0.5130 / $1.0700 | Buy Now |
Part Details for BSZ040N04LSGATMA1
BSZ040N04LSGATMA1 CAD Models
BSZ040N04LSGATMA1 Part Data Attributes
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BSZ040N04LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ040N04LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 40V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.0056 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSZ040N04LSGATMA1
This table gives cross-reference parts and alternative options found for BSZ040N04LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ040N04LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSZ040N04LSG | Power Field-Effect Transistor, 18A I(D), 40V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ040N04LSGATMA1 vs BSZ040N04LSG |