Part Details for BSZ088N03LSGATMA1 by Infineon Technologies AG
Results Overview of BSZ088N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
BSZ088N03LSGATMA1 Information
BSZ088N03LSGATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ088N03LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 40000 |
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$0.2391 / $0.3856 | Buy Now |
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DISTI #
BSZ088N03LSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 40A, 35W, PG-TSDSON-8 Min Qty: 1 | 0 |
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$0.3120 / $0.8100 | RFQ |
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Win Source Electronics | MOSFET N-CH 30V 40A TSDSON-8 | 36000 |
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$0.3054 / $0.4580 | Buy Now |
Part Details for BSZ088N03LSGATMA1
BSZ088N03LSGATMA1 CAD Models
BSZ088N03LSGATMA1 Part Data Attributes
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BSZ088N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ088N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Rohs Compliant, Plastic, Tsdson-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated, Logic Level Compatible | |
| Avalanche Energy Rating (Eas) | 25 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for BSZ088N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSZ088N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ088N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ088N03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSDSON-8 | BSZ088N03LSGATMA1 vs BSZ088N03LSG |
| IPD090N03LGHF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | BSZ088N03LSGATMA1 vs IPD090N03LGHF |
| AOL1448 | Alpha & Omega Semiconductor | Check for Price | Power Field-Effect Transistor, 36A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRASO-8, 3 PIN | BSZ088N03LSGATMA1 vs AOL1448 |
| AON6428 | Alpha & Omega Semiconductor | Check for Price | Power Field-Effect Transistor, 43A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8 | BSZ088N03LSGATMA1 vs AON6428 |
| IPF090N03LG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | BSZ088N03LSGATMA1 vs IPF090N03LG |
BSZ088N03LSGATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the BSZ088N03LSGATMA1 is -55°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be between 1.5V and 30V.
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To minimize parasitic inductance, it is recommended to use a compact PCB layout with short, wide traces, and to place the MOSFET close to the power source. Additionally, using a ground plane and decoupling capacitors can help reduce parasitic inductance.
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To protect the MOSFET from overvoltage and overcurrent conditions, it is recommended to use a voltage regulator or a voltage clamp to limit the voltage, and to add current-sensing resistors and fuses to detect and respond to overcurrent conditions.
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The recommended gate resistor value for the BSZ088N03LSGATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.