Part Details for BSZ130N03MSGATMA1 by Infineon Technologies AG
Overview of BSZ130N03MSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSZ130N03MSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2544
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Newark | Mosfet, N Ch, 30V, 35A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSZ130N03MSGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1301 |
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$0.2830 / $0.3600 | Buy Now |
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DISTI #
BSZ130N03MSGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 9A/35A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
15275 In Stock |
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$0.2466 / $1.1200 | Buy Now |
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DISTI #
60R2544
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Avnet Americas | Trans MOSFET N-CH 30V 9A 8-Pin TSDSON T/R - Bulk (Alt: 60R2544) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Bulk | 1301 Partner Stock |
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$0.3310 / $0.7800 | Buy Now |
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DISTI #
BSZ130N03MSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 9A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ130N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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Future Electronics | Single N-Channel 30 V 11.5 mOhm 13 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.2050 / $0.2150 | Buy Now |
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Future Electronics | Single N-Channel 30 V 11.5 mOhm 13 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.2050 / $0.2150 | Buy Now |
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DISTI #
BSZ130N03MSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 31A, 25W, PG-TSDSON-8 Min Qty: 1 | 0 |
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$0.2760 / $0.4450 | RFQ |
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DISTI #
C1S322000898370
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Chip1Stop | Trans MOSFET N-CH 30V 9A 8-Pin TSDSON EP T/R RoHS: Compliant Container: Cut Tape | 9870 |
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$0.1920 / $0.2000 | Buy Now |
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DISTI #
C1S322000516050
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Chip1Stop | MOSFET RoHS: Compliant | 5000 |
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$0.2290 | Buy Now |
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DISTI #
C1S322000675937
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Chip1Stop | MOSFET RoHS: Compliant | 4085 |
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$0.2160 / $0.3160 | Buy Now |
Part Details for BSZ130N03MSGATMA1
BSZ130N03MSGATMA1 CAD Models
BSZ130N03MSGATMA1 Part Data Attributes
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BSZ130N03MSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ130N03MSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 9 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |