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Part Details for BSZ15DC02KDHXTMA1 by Infineon Technologies AG
Results Overview of BSZ15DC02KDHXTMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
BSZ15DC02KDHXTMA1 Information
BSZ15DC02KDHXTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ15DC02KDHXTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8355
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Newark | Mosfet, N & P-Ch, 20V, 5.1A, 2.5W, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:5.1A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSZ15DC02KDHXTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 200 |
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$0.5110 / $1.4300 | Buy Now |
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DISTI #
13AC8355
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Avnet Americas | MOSFET Array, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 3.2 A, 55 mOhm, 150 mOhm, TSDSON, 8 Pins - Product that comes on tape, but is not reeled (Alt: 13AC8355) COO: Austria RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 200 Partner Stock |
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$0.6700 / $1.1700 | Buy Now |
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DISTI #
BSZ15DC02KDHXTMA1
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Avnet Americas | MOSFET Array, Complementary N and P Channel, 20 V, 20 V, 5.1 A, 3.2 A, 55 mOhm, 150 mOhm, TSDSON, 8 Pins - Tape and Reel (Alt: BSZ15DC02KDHXTMA1) COO: Austria RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.4175 / $0.4771 | Buy Now |
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Bristol Electronics | 331 |
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RFQ | ||
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Rochester Electronics | 20V-60V Complementary MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 73423 |
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$0.3516 / $0.5671 | Buy Now |
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DISTI #
BSZ15DC02KDHXTMA1
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TME | Transistor: N/P-MOSFET, unipolar, 20/-20V, 5.1/-3.2A, 2.5W Min Qty: 1 | 0 |
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$0.6280 / $1.1300 | RFQ |
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DISTI #
SMC-BSZ15DC02KDHXTMA1
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: TBC | 5413 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1050 |
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RFQ | |
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DISTI #
BSZ15DC02KDHXTMA1
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 4969 |
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$0.4750 | Buy Now |
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Chip Stock | TransMOSFETN/P-CH20V5.1A/3.2AAutomotive8-PinTSDSONEPT/R | 127500 |
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RFQ |
Part Details for BSZ15DC02KDHXTMA1
BSZ15DC02KDHXTMA1 CAD Models
BSZ15DC02KDHXTMA1 Part Data Attributes
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BSZ15DC02KDHXTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ15DC02KDHXTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 5.1A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Green, Plastic, Tsdson-8 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 11 Mj | |
| Case Connection | Drain | |
| Configuration | Common Drain, 2 Elements With Built-In Diode | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Square | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel And P-Channel | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Transistor Element Material | Silicon |
Alternate Parts for BSZ15DC02KDHXTMA1
This table gives cross-reference parts and alternative options found for BSZ15DC02KDHXTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ15DC02KDHXTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSZ15DC02KDH | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.1A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSZ15DC02KDHXTMA1 vs BSZ15DC02KDH |
BSZ15DC02KDHXTMA1 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
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The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
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The critical timing parameters include the input rise and fall times, and the output propagation delay. These can be ensured by using a proper PCB layout, signal routing, and termination.
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ESD protection can be achieved by using ESD protection diodes, TVS diodes, or ESD-protected buffers. Proper PCB layout and handling practices can also help prevent ESD damage.
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The device has a maximum junction temperature of 150°C. Thermal management considerations include using a heat sink, thermal interface material, and ensuring good airflow around the device.