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Transistors / Power Field-Effect Transistors / BSZ16DN25NS3GATMA1
Datasheets
BSZ16DN25NS3GATMA1 by:

Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Part Details for BSZ16DN25NS3GATMA1 by Infineon Technologies AG

Overview of BSZ16DN25NS3GATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for BSZ16DN25NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8356
Newark Mosfet, N-Ch, 250V, 10.9A/150Deg C/62.5W, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:10.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSZ16DN25NS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 847
  • 1 $2.2200
  • 10 $1.8400
  • 25 $1.7200
  • 50 $1.5900
  • 100 $1.4700
  • 250 $1.3500
  • 500 $1.2400
  • 1,000 $1.0500
$1.0500 / $2.2200 Buy Now
DISTI # 86AK4595
Newark Mosfet, N-Ch, 250V, 10.9A, Tsdson Rohs Compliant: Yes |Infineon BSZ16DN25NS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.9450
  • 10,000 $0.9300
$0.9300 / $0.9450 Buy Now
DISTI # BSZ16DN25NS3GATMA1CT-ND
DigiKey MOSFET N-CH 250V 10.9A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 6078
In Stock
  • 1 $2.1300
  • 10 $1.7700
  • 100 $1.4090
  • 500 $1.1922
  • 1,000 $1.0116
  • 2,000 $0.9610
  • 5,000 $0.9249
  • 10,000 $0.8942
$0.8942 / $2.1300 Buy Now
DISTI # BSZ16DN25NS3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ16DN25NS3GATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.1089
$1.1089 Buy Now
DISTI # 13AC8356
Avnet Americas Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 13AC8356) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 847 Partner Stock
  • 1 $2.2200
  • 10 $1.8400
  • 25 $1.7200
  • 50 $1.5900
  • 100 $1.4700
$1.4700 / $2.2200 Buy Now
DISTI # 726-BSZ16DN25NS3GATM
Mouser Electronics MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 RoHS: Compliant 4990
  • 1 $2.1300
  • 10 $1.7700
  • 100 $1.4100
  • 250 $1.3700
  • 500 $1.2000
  • 1,000 $0.9610
  • 5,000 $0.9240
$0.9240 / $2.1300 Buy Now
Future Electronics Single N-Channel 250 V 165 mOhm 8.6 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 10000
Reel
  • 5,000 $0.6800
$0.6800 Buy Now
Future Electronics Single N-Channel 250 V 165 mOhm 8.6 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.9250
$0.9250 Buy Now
DISTI # 69268066
Verical Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON EP T/R Min Qty: 20 Package Multiple: 1 Date Code: 2325 Americas - 20768
  • 20 $1.5875
  • 50 $1.4750
  • 100 $1.2500
  • 200 $1.1837
  • 500 $1.1800
  • 1,000 $1.0663
  • 2,000 $1.0050
  • 5,000 $0.9800
  • 10,000 $0.9500
$0.9500 / $1.5875 Buy Now
DISTI # BSZ16DN25NS3GATMA1
Avnet Americas Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ16DN25NS3GATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.1089
$1.1089 Buy Now
DISTI # 13AC8356
Avnet Americas Trans MOSFET N-CH 250V 10.9A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 13AC8356) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 847 Partner Stock
  • 1 $2.2200
  • 10 $1.8400
  • 25 $1.7200
  • 50 $1.5900
  • 100 $1.4700
$1.4700 / $2.2200 Buy Now
Ameya Holding Limited   Min Qty: 5000 100
  • 5,000 $1.2548
  • 25,000 $1.2172
$1.2172 / $1.2548 Buy Now
Chip1Cloud MOSFET N-CH 250V 10.9A 8TSDSON 3030
RFQ
DISTI # 2725827
element14 Asia-Pacific MOSFET, N-CH, 250V, 10.9A, TSDSON RoHS: Compliant Min Qty: 5 Container: Cut Tape 38074
  • 5 $1.9125
  • 50 $1.5286
  • 250 $1.2996
  • 1,000 $1.0338
  • 3,000 $0.9969
$0.9969 / $1.9125 Buy Now
DISTI # 2725827RL
element14 Asia-Pacific MOSFET, N-CH, 250V, 10.9A, TSDSON RoHS: Compliant Min Qty: 50 Container: Reel 38074
  • 50 $1.5286
  • 250 $1.2996
  • 1,000 $1.0338
  • 3,000 $0.9969
$0.9969 / $1.5286 Buy Now
DISTI # 2725827
Farnell MOSFET, N-CH, 250V, 10.9A, TSDSON RoHS: Compliant Min Qty: 5 Lead time: 33 Weeks, 1 Days Container: Cut Tape 38074
  • 5 $1.8331
  • 50 $1.4313
  • 250 $1.2116
  • 1,000 $0.9831
  • 3,000 $0.9529
$0.9529 / $1.8331 Buy Now
DISTI # 2725827RL
Farnell MOSFET, N-CH, 250V, 10.9A, TSDSON RoHS: Compliant Min Qty: 50 Lead time: 33 Weeks, 1 Days Container: Reel 38074
  • 50 $1.4313
  • 250 $1.2116
  • 1,000 $0.9831
  • 3,000 $0.9529
$0.9529 / $1.4313 Buy Now
DISTI # 4319081
Farnell MOSFET, N-CH, 250V, 10.9A, TSDSON RoHS: Compliant Min Qty: 5000 Lead time: 33 Weeks, 1 Days Container: Reel 0
  • 5,000 $0.9341
  • 15,000 $0.9153
$0.9153 / $0.9341 Buy Now
Win Source Electronics MOSFET N-CH 250V 10.9A 8TSDSON 26800
  • 4 $12.7180
  • 10 $10.4350
  • 15 $10.1090
  • 21 $9.7830
  • 27 $9.4570
  • 36 $8.4790
$8.4790 / $12.7180 Buy Now

Part Details for BSZ16DN25NS3GATMA1

BSZ16DN25NS3GATMA1 CAD Models

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BSZ16DN25NS3GATMA1 Part Data Attributes:

Parametric Data
BSZ16DN25NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSZ16DN25NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PDSO-N5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 10.9 A
Drain-source On Resistance-Max 0.165 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSZ16DN25NS3GATMA1

This table gives cross-reference parts and alternative options found for BSZ16DN25NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ16DN25NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC16DN25NS3GATMA1 Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSZ16DN25NS3GATMA1 vs BSC16DN25NS3GATMA1
BSC16DN25NS3G Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSZ16DN25NS3GATMA1 vs BSC16DN25NS3G

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