BUK454-500B
Description: TRANSISTOR 3.3 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Overview of BUK454-500B by NXP Semiconductors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
BLM31SN500BH1L Murata Manufacturing Co Ltd FB SMD 1206inch 50ohm POWRTRN

CAD Models for BUK454-500B by NXP Semiconductors
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Part Data Attributes for BUK454-500B by NXP Semiconductors

BUK454-500B
NXP Semiconductors
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
3.3 A
Drain-source On Resistance-Max
2.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
55 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
13 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
105 ns
Turn-on Time-Max (ton)
80 ns
Want to compare parts?
  1. BUK454-500B
    NXP Semiconductors
    TRANSISTOR 3.3 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
    VS

Alternate Parts for BUK454-500B

This table gives cross-reference parts and alternative options found for BUK454-500B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK454-500B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BUZ74 2.4A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUK454-500B vs BUZ74
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUK454-500B vs IRF821
MTP2N45 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Semiconductor Technology Inc BUK454-500B vs MTP2N45
IRF821 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors BUK454-500B vs IRF821
MTP1N45 Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUK454-500B vs MTP1N45
IRF821-001 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUK454-500B vs IRF821-001
IRF823 Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUK454-500B vs IRF823
IRF821-009 Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUK454-500B vs IRF821-009
IRF823 Power Field-Effect Transistor, 2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUK454-500B vs IRF823
IRF822 2.8A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUK454-500B vs IRF822
Part Number Description Manufacturer Compare
IRF821 3A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUK454-500B vs IRF821
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUK454-500B vs BUZ74
MTP1N45 1A, 450V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUK454-500B vs MTP1N45
BUZ74 Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG BUK454-500B vs BUZ74
IRF820PBF Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier BUK454-500B vs IRF820PBF
RFP3N45 Power Field-Effect Transistor, 3A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUK454-500B vs RFP3N45
IRF823 2A, 450V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUK454-500B vs IRF823
IRF821 2.5A, 450V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUK454-500B vs IRF821
IRF822 Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUK454-500B vs IRF822
IRF822 2.8A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUK454-500B vs IRF822

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