Part Details for BUK92150-55A,118 by NXP Semiconductors
Overview of BUK92150-55A,118 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
HAT2265H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak | |
HAT2165H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak | |
RJK0453DPB-00#J5 | Renesas Electronics Corporation | Nch Single Power Mosfet 40V 55A 2.3Mohm Lfpak |
Price & Stock for BUK92150-55A,118
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 11 A, 55 V, 0.155 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 1097 |
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$1.4400 / $3.6000 | Buy Now |
Part Details for BUK92150-55A,118
BUK92150-55A,118 CAD Models
BUK92150-55A,118 Part Data Attributes
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BUK92150-55A,118
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
BUK92150-55A,118
NXP Semiconductors
N-channel TrenchMOS logic level FET DPAK 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | DPAK | |
Package Description | PLASTIC, TO-252, SC-63, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT428 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Avalanche Energy Rating (Eas) | 16 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 36 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BUK92150-55A,118
This table gives cross-reference parts and alternative options found for BUK92150-55A,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK92150-55A,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUK92150-55A | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Nexperia | BUK92150-55A,118 vs BUK92150-55A |
FQD13N06LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK, 2500-REEL | onsemi | BUK92150-55A,118 vs FQD13N06LTM |
UTD3055G-TN3-R | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE, DPAK-3 | Unisonic Technologies Co Ltd | BUK92150-55A,118 vs UTD3055G-TN3-R |
FQD13N06_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06_NL |
FQD13N06LTM | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTM |
FQD13N06LTF | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTF |
FQD13N06LTF_NL | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTF_NL |
BUK92150-55A,118 | N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin | Nexperia | BUK92150-55A,118 vs BUK92150-55A,118 |
FQD13N06TF | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06TF |
BUK92150-55A | 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | BUK92150-55A,118 vs BUK92150-55A |