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N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
HAT2265H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak | |
HAT2165H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 55A 3.3Mohm Lfpak | |
RJK0453DPB-00#J5 | Renesas Electronics Corporation | Nch Single Power Mosfet 40V 55A 2.3Mohm Lfpak |
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BUK92150-55A,118
Nexperia
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Datasheet
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BUK92150-55A,118
Nexperia
N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DPAK | |
Package Description | PLASTIC, TO-252, SC-63, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT428 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 16 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BUK92150-55A,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK92150-55A,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQD13N06_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06_NL |
BUK92150-55A | 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | BUK92150-55A,118 vs BUK92150-55A |
FQD13N06TM | Power MOSFET, N-Channel, QFET®, 60 V, 10 A, 140 mΩ, DPAK, 2500-REEL | onsemi | BUK92150-55A,118 vs FQD13N06TM |
FQD13N06LTF_NL | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTF_NL |
FQD13N06L | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06L |
FQD13N06TF_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06TF_NL |
FQD13N06LTM | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTM |
FQD13N06LTF | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06LTF |
FQD13N06 | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUK92150-55A,118 vs FQD13N06 |
FQD13N06LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK, 2500-REEL | onsemi | BUK92150-55A,118 vs FQD13N06LTM |