Part Details for BUZ10 by Motorola Semiconductor Products
Overview of BUZ10 by Motorola Semiconductor Products
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Smart Cities
Part Details for BUZ10
BUZ10 CAD Models
BUZ10 Part Data Attributes
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BUZ10
Motorola Semiconductor Products
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Datasheet
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BUZ10
Motorola Semiconductor Products
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 20 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for BUZ10
This table gives cross-reference parts and alternative options found for BUZ10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75309P3 | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | BUZ10 vs HUF75309P3 |
BUZ10 | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Siemens | BUZ10 vs BUZ10 |
BUZ11A | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | BUZ10 vs BUZ11A |
BUZ10 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | BUZ10 vs BUZ10 |
HUF75309P3_NL | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | BUZ10 vs HUF75309P3_NL |
RFP25N06 | 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ10 vs RFP25N06 |
BUZ11A | 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | BUZ10 vs BUZ11A |
BUZ10 | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-220AB | Freescale Semiconductor | BUZ10 vs BUZ10 |
IRFZ30 | Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | BUZ10 vs IRFZ30 |
BUZ10 | Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | BUZ10 vs BUZ10 |