Datasheets
BUZ11L by:

30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for BUZ11L by Motorola Mobility LLC

Overview of BUZ11L by Motorola Mobility LLC

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Part Details for BUZ11L

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BUZ11L Part Data Attributes

BUZ11L Motorola Mobility LLC
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BUZ11L Motorola Mobility LLC 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ11L

This table gives cross-reference parts and alternative options found for BUZ11L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK9506-55A,127 BUK9506-55A - N-channel TrenchMOS FET TO-220 3-Pin NXP Semiconductors BUZ11L vs BUK9506-55A,127
PSMN4R6-60PS Power Field-Effect Transistor Nexperia BUZ11L vs PSMN4R6-60PS
IRFS630B Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Fairchild Semiconductor Corporation BUZ11L vs IRFS630B
APT5030BNR 21A, 500V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Microsemi Corporation BUZ11L vs APT5030BNR
BUK436-200A TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BUZ11L vs BUK436-200A
934055638127 75A, 55V, 0.0067ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB, TO-220AB, 3 PIN NXP Semiconductors BUZ11L vs 934055638127
BUK444-500B TRANSISTOR 1.9 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BUZ11L vs BUK444-500B
PHX1N40E TRANSISTOR 1.75 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors BUZ11L vs PHX1N40E
BUK7520-55 TRANSISTOR 52 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors BUZ11L vs BUK7520-55
APT1001R1BVFR Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Advanced Power Technology BUZ11L vs APT1001R1BVFR

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