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BUZ31 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for BUZ31 by Thomson Consumer Electronics

Overview of BUZ31 by Thomson Consumer Electronics

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Part Details for BUZ31

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BUZ31 Part Data Attributes

BUZ31 Thomson Consumer Electronics
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BUZ31 Thomson Consumer Electronics Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer THOMSON CONSUMER ELECTRONICS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 12.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for BUZ31

This table gives cross-reference parts and alternative options found for BUZ31. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ31, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK456-200B TRANSISTOR 17 A, 200 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors BUZ31 vs BUK456-200B
IRF642-009 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ31 vs IRF642-009
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUZ31 vs IRF642
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ31 vs IRF641
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ31 vs IRF642
IRF642 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ31 vs IRF642
IRF642 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ31 vs IRF642
STP19NB20 19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ31 vs STP19NB20
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUZ31 vs IRF641
IRF642-001 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ31 vs IRF642-001
Part Number Description Manufacturer Compare
IRF640S 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 STMicroelectronics BUZ31 vs IRF640S
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ31 vs IRF641
RFP12N20 Power Field-Effect Transistor, 12A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUZ31 vs RFP12N20
IRF640NS Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 International Rectifier BUZ31 vs IRF640NS
IRF640STRRPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix BUZ31 vs IRF640STRRPBF
RFP15N15 Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation BUZ31 vs RFP15N15
IRF642 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ31 vs IRF642
FQB19N20CTM Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, D2PAK, 800-REEL onsemi BUZ31 vs FQB19N20CTM
IRLW640ATM Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation BUZ31 vs IRLW640ATM
BUK456-200A TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors BUZ31 vs BUK456-200A

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