Datasheets
BUZ344 by:

Power Field-Effect Transistor, 46A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

Part Details for BUZ344 by Siemens

Overview of BUZ344 by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BUZ344

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 46A I(D), 100V, 0.035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-218 240
  • 1 $3.1320
  • 34 $2.0880
  • 121 $1.9314
$1.9314 / $3.1320 Buy Now
ComSIT USA SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant Stock EU - 2192
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for BUZ344

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BUZ344 Part Data Attributes

BUZ344 Siemens
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BUZ344 Siemens Power Field-Effect Transistor, 46A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 400 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 46 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 650 pF
JEDEC-95 Code TO-218
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 170 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 980 ns
Turn-on Time-Max (ton) 260 ns

Alternate Parts for BUZ344

This table gives cross-reference parts and alternative options found for BUZ344. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ344, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP150 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC BUZ344 vs IRFP150
IRFP150 IRFP150 Texas Instruments BUZ344 vs IRFP150
IRFP150N 44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation BUZ344 vs IRFP150N
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix BUZ344 vs IRFP150
BUZ345 Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens BUZ344 vs BUZ345
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ344 vs IRFP150
IRFP150 TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,40A I(D),TO-247 National Semiconductor Corporation BUZ344 vs IRFP150
IRFP140 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Rochester Electronics LLC BUZ344 vs IRFP140
Part Number Description Manufacturer Compare
IRFP150N 44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation BUZ344 vs IRFP150N
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix BUZ344 vs IRFP150
2SK3151 Power Field-Effect Transistor, 0.025ohm, N-Channel, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Hitachi Ltd BUZ344 vs 2SK3151
BUZ345 Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens BUZ344 vs BUZ345
IRFP140 Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ344 vs IRFP140
IRFP150 Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier BUZ344 vs IRFP150

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