Part Details for BUZ344 by Siemens
Overview of BUZ344 by Siemens
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ344
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 46A I(D), 100V, 0.035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-218 | 240 |
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$1.9314 / $3.1320 | Buy Now |
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ComSIT USA | SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA RoHS: Not Compliant |
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RFQ |
Part Details for BUZ344
BUZ344 CAD Models
BUZ344 Part Data Attributes
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BUZ344
Siemens
Buy Now
Datasheet
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Compare Parts:
BUZ344
Siemens
Power Field-Effect Transistor, 46A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 46 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 650 pF | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 170 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 980 ns | |
Turn-on Time-Max (ton) | 260 ns |
Alternate Parts for BUZ344
This table gives cross-reference parts and alternative options found for BUZ344. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ344, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFP150 | 40A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | BUZ344 vs IRFP150 |
IRFP150 | IRFP150 | Texas Instruments | BUZ344 vs IRFP150 |
IRFP150N | 44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ344 vs IRFP150N |
IRFP150 | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Vishay Siliconix | BUZ344 vs IRFP150 |
BUZ345 | Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | BUZ344 vs BUZ345 |
IRFP150 | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ344 vs IRFP150 |
IRFP150 | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,40A I(D),TO-247 | National Semiconductor Corporation | BUZ344 vs IRFP150 |
IRFP140 | 31A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Rochester Electronics LLC | BUZ344 vs IRFP140 |