Datasheets
BUZ73AL by:

Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for BUZ73AL by Siemens

Overview of BUZ73AL by Siemens

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Price & Stock for BUZ73AL

Part # Distributor Description Stock Price Buy
ComSIT USA SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Europe - 4549
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Part Details for BUZ73AL

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BUZ73AL Part Data Attributes:

BUZ73AL Siemens
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BUZ73AL Siemens Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 120 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.8 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 95 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 180 ns
Turn-on Time-Max (ton) 110 ns

Alternate Parts for BUZ73AL

This table gives cross-reference parts and alternative options found for BUZ73AL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ73AL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ73ALHXKSA1 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ73ALHXKSA1
BUZ73AL Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG BUZ73AL vs BUZ73AL
Part Number Description Manufacturer Compare
BUZ31H3046XKSA1 Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ31H3046XKSA1
RFP8N18L 8A, 180V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ73AL vs RFP8N18L
BUZ32H3045AATMA1 Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ32H3045AATMA1
MTP8N15L 8A, 150V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ73AL vs MTP8N15L
BUZ31HXKSA1 Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ31HXKSA1
BSZ42DN25NS3G Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BUZ73AL vs BSZ42DN25NS3G
BUZ31H3046 Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ31H3046
BUZ32HXKSA1 Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ32HXKSA1
BUZ73ALHXKSA1 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ73AL vs BUZ73ALHXKSA1
BSZ22DN20NS3G Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BUZ73AL vs BSZ22DN20NS3G

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