Part Details for CJP75N80 by Jiangsu Changjiang Electronics Technology Co Ltd
Overview of CJP75N80 by Jiangsu Changjiang Electronics Technology Co Ltd
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Part Details for CJP75N80
CJP75N80 CAD Models
CJP75N80 Part Data Attributes:
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CJP75N80
Jiangsu Changjiang Electronics Technology Co Ltd
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CJP75N80
Jiangsu Changjiang Electronics Technology Co Ltd
Transistor
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 260 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2 W | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |