Datasheets
CM100DY-24A by:

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for CM100DY-24A by Mitsubishi Electric

Overview of CM100DY-24A by Mitsubishi Electric

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Price & Stock for CM100DY-24A

Part # Distributor Description Stock Price Buy
DISTI # 19K9202
Newark Igbt Module, 1.2Kv, 100A, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:3V, Power Dissipation:672W, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: No |Mitsubishi Electric CM100DY-24A Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $102.8200
  • 5 $96.5500
  • 10 $90.2800
$90.2800 / $102.8200 Buy Now
DISTI # 917-CM100DY-24A
Mouser Electronics IGBT Modules IGBT MODULE A-SERIES DUAL RoHS: Compliant 0
  • 1 $98.8700
  • 10 $86.8100
$86.8100 / $98.8700 Order Now
Bristol Electronics   287
RFQ
Perfect Parts Corporation   9135
RFQ

Part Details for CM100DY-24A

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CM100DY-24A Part Data Attributes

CM100DY-24A Mitsubishi Electric
Buy Now Datasheet
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CM100DY-24A Mitsubishi Electric Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 672 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 3 V

Alternate Parts for CM100DY-24A

This table gives cross-reference parts and alternative options found for CM100DY-24A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM100DY-24A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM100DY-24A Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors CM100DY-24A vs CM100DY-24A
Part Number Description Manufacturer Compare
MG150Q2YS1 TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM100DY-24A vs MG150Q2YS1
MG100Q2YS42 TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM100DY-24A vs MG100Q2YS42
MG150Q2YS11 TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM100DY-24A vs MG150Q2YS11
1MBI200S-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd CM100DY-24A vs 1MBI200S-120
MG100Q2YS50A TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM100DY-24A vs MG100Q2YS50A
MG200Q2YS50 TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM100DY-24A vs MG200Q2YS50
APTGT200U120D4 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation CM100DY-24A vs APTGT200U120D4
2MBI200SB-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd CM100DY-24A vs 2MBI200SB-120
BSM100GB120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN Infineon Technologies AG CM100DY-24A vs BSM100GB120DN2
MG300N1US1 TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components CM100DY-24A vs MG300N1US1

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