Part Details for CM100TU-24F by Mitsubishi Electric
Results Overview of CM100TU-24F by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
CM100TU-24F Information
CM100TU-24F by Mitsubishi Electric is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CM100TU-24F
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
95B1830
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Newark | Igbt Module, 1.2Kv, 100A, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:1.2Kv, Power Dissipation:500W, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Mitsubishi Electric CM100TU-24F RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM100TU-24F
CM100TU-24F CAD Models
CM100TU-24F Part Data Attributes
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CM100TU-24F
Mitsubishi Electric
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Datasheet
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CM100TU-24F
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | MODULE | |
| Package Description | Module-17 | |
| Pin Count | 17 | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| Case Connection | Isolated | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | Bridge, 6 Elements With Built-In Diode | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X17 | |
| Number of Elements | 6 | |
| Number of Terminals | 17 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 500 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Unspecified | |
| Terminal Position | Upper | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Power Control | |
| Transistor Element Material | Silicon | |
| VCEsat-Max | 2.4 V |
Alternate Parts for CM100TU-24F
This table gives cross-reference parts and alternative options found for CM100TU-24F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM100TU-24F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CM100TU-24F | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel | CM100TU-24F vs CM100TU-24F |
| 6MBI75VA-060-50 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, COMPACT PACKAGE-28 | CM100TU-24F vs 6MBI75VA-060-50 |
| 6MBI50S-120L | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M623, 17 PIN | CM100TU-24F vs 6MBI50S-120L |
| 6MBI100VA-060-50 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, COMPACT PACKAGE-28 | CM100TU-24F vs 6MBI100VA-060-50 |
| 6MBI50F-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN | CM100TU-24F vs 6MBI50F-120 |
| MWI75-12E8 | IXYS Corporation | Check for Price | Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, MODULE-19 | CM100TU-24F vs MWI75-12E8 |
| MG50Q6ES50A | Toshiba America Electronic Components | Check for Price | TRANSISTOR 72 A, 1200 V, N-CHANNEL IGBT, MODULE-17, Insulated Gate BIP Transistor | CM100TU-24F vs MG50Q6ES50A |
| 6MBI100VA-120-50 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, COMPACT PACKAGE-28 | CM100TU-24F vs 6MBI100VA-120-50 |
| FS100R12KE3 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 | CM100TU-24F vs FS100R12KE3 |
| 6MBI75VA-120-50 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, COMPACT PACKAGE-28 | CM100TU-24F vs 6MBI75VA-120-50 |
CM100TU-24F Frequently Asked Questions (FAQ)
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The maximum ambient temperature for the CM100TU-24F is 50°C (122°F) without derating, and 40°C (104°F) with derating.
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Yes, the CM100TU-24F can be used in a redundant configuration to ensure high system availability and reliability.
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The typical response time for the CM100TU-24F's overcurrent protection is 10-20 μs.
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Yes, the CM100TU-24F is compatible with Mitsubishi Electric's iQ-R series PLCs, allowing for seamless integration and communication.
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The recommended torque value for the CM100TU-24F's terminal screws is 0.5-1.0 Nm (4.4-8.8 lbf-in).