CM400HA-24A
Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4

Overview of CM400HA-24A by Mitsubishi Electric

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Electronic Manufacturing

Available Datasheets

Part # Manufacturer Description Datasheet
CS1100 Coilcraft Inc Current Sense Transformer, 24A, 1:100
CS4100V-01L Coilcraft Inc Current Sense Transformer, 24A, ROHS COMPLIANT
UPA2814T1S-E2-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -24A 7.8Mohm HWSON-8

Price & Stock for CM400HA-24A by Mitsubishi Electric

Part # Manufacturer Description Stock Price Buy
DISTI # 19K9226
Newark Igbt Module, 1200V, 400A, Igbtmod, Continuous Collector Current:400A, Collector Emitter Saturation Voltage:1.2Kv, Power Dissipation:2.35Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: No |Mitsubishi Electric CM400HA-24A RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 42
  • 1 $174.8900
  • 5 $169.3400
  • 10 $163.8000
  • 25 $159.4100
$159.4100 / $174.8900 Buy Now

CAD Models for CM400HA-24A by Mitsubishi Electric
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Part Data Attributes for CM400HA-24A by Mitsubishi Electric

CM400HA-24A
Mitsubishi Electric
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Package Description
FLANGE MOUNT, R-XUFM-X3
Pin Count
4
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
ISOLATED
Collector Current-Max (IC)
400 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2350 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
VCEsat-Max
3 V
Want to compare parts?
  1. CM400HA-24A
    Mitsubishi Electric
    Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4
    VS

Alternate Parts for CM400HA-24A

This table gives cross-reference parts and alternative options found for CM400HA-24A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM400HA-24A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
1MBI300SA-120 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd CM400HA-24A vs 1MBI300SA-120
CM400HA-24H Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, Mitsubishi Electric CM400HA-24A vs CM400HA-24H
CM400DY-13T Insulated Gate Bipolar Transistor, Mitsubishi Electric CM400HA-24A vs CM400DY-13T
DIM400LSS12-A000 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, L, 5 PIN Dynex Semiconductor CM400HA-24A vs DIM400LSS12-A000
CM400HU-24H Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Mitsubishi Electric CM400HA-24A vs CM400HU-24H
MG400Q1US2 TRANSISTOR 400 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM400HA-24A vs MG400Q1US2
MG400Q1US1 TRANSISTOR 400 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM400HA-24A vs MG400Q1US1
1MBI400NP-120 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M128, 4 PIN Fuji Electric Co Ltd CM400HA-24A vs 1MBI400NP-120
1MBI400L-120 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN Fuji Electric Co Ltd CM400HA-24A vs 1MBI400L-120
CM400DU-12F Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7 Powerex Power Semiconductors CM400HA-24A vs CM400DU-12F

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