Datasheets
CP390-CDM4-600LR by: Central Semiconductor Corp

Power Field-Effect Transistor,

Part Details for CP390-CDM4-600LR by Central Semiconductor Corp

Overview of CP390-CDM4-600LR by Central Semiconductor Corp

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Part Details for CP390-CDM4-600LR

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CP390-CDM4-600LR Part Data Attributes

CP390-CDM4-600LR Central Semiconductor Corp
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CP390-CDM4-600LR Central Semiconductor Corp Power Field-Effect Transistor,
Part Life Cycle Code Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Package Description UNCASED CHIP, R-XXUC-N3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-02
Avalanche Energy Rating (Eas) 197 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XXUC-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 13.5 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UNSPECIFIED
Transistor Element Material SILICON

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