Part Details for CSD17483F4 by Texas Instruments
Results Overview of CSD17483F4 by Texas Instruments
- Distributor Offerings: (4 listings)
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- Tariff Estimator: (Available) NEW
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- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
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CSD17483F4 Information
CSD17483F4 by Texas Instruments is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| CSD17483F4 | Texas Instruments | 30V, N ch NexFET MOSFET™, single LGA 1.0 x 0.6mm, 260mOhm 3-PICOSTAR -55 to 150 | |
| CSD17483F4T | Texas Instruments | 30V, N ch NexFET MOSFET™, single LGA 1.0 x 0.6mm, 260mOhm 3-PICOSTAR -55 to 150 |
Price & Stock for CSD17483F4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 23 | 9808 |
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$0.0338 / $0.2250 | Buy Now |
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Bristol Electronics | Min Qty: 19 | 3000 |
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$0.0552 / $0.2760 | Buy Now |
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Chip Stock | MOSFETN-CH30V1.5A3PICOSTARN-Channel30V1.5A(Ta)500mW(Ta)SurfaceMount3-PICOSTAR | 348500 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 30V 1.5A 3PICOSTAR / 30 V, N-Channel FemtoFET MOSFET | 310040 |
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$0.0429 / $0.0553 | Buy Now |
US Tariff Estimator: CSD17483F4 by Texas Instruments
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Part Details for CSD17483F4
CSD17483F4 CAD Models
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CSD17483F4 Part Data Attributes
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CSD17483F4
Texas Instruments
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CSD17483F4
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.40 | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode And Resistor | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 1.5 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 3 Pf | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Chip Carrier | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Pulsed Drain Current-Max (IDM) | 5 A | |
| Surface Mount | Yes | |
| Terminal Finish | Nickel/Gold (Ni/Au) | |
| Terminal Form | No Lead | |
| Terminal Position | Bottom | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Resources and Additional Insights for CSD17483F4
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CSD17483F4 Frequently Asked Questions (FAQ)
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The maximum SOA for the CSD17483F4 is not explicitly stated in the datasheet. However, TI recommends following the SOA curves provided in the application note 'NexFET Power MOSFET Safe Operating Area' (SLUA623) to ensure reliable operation.
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To optimize the gate drive circuit, consider the following: use a low-impedance gate drive, minimize the gate resistance, and ensure the gate voltage is within the recommended range (4.5V to 15V). Additionally, consider using a gate driver IC, such as the UCC37322, to improve switching performance.
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For optimal performance, follow these PCB layout guidelines: keep the drain and source pins as close as possible, use a solid ground plane, and minimize the length of the drain and source traces. Also, consider using a thermal pad and vias to improve heat dissipation.
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To ensure reliable operation, consider the following thermal management strategies: use a heat sink with a thermal interface material, ensure good airflow, and avoid overheating by monitoring the junction temperature (TJ). The maximum TJ for the CSD17483F4 is 150°C.
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The CSD17483F4 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-protective package.