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60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-41076-1-ND
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DigiKey | MOSFET N-CH 60V 100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
12121 In Stock |
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$1.0257 / $2.3600 | Buy Now |
DISTI #
595-CSD18540Q5B
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Mouser Electronics | MOSFET 60V, N-channel NexFET Pwr MOSFET RoHS: Compliant | 62451 |
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$1.0200 / $2.2700 | Buy Now |
DISTI #
V72:2272_07248842
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Arrow Electronics | Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2239 Container: Cut Strips | Americas - 1351 |
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$1.0554 / $2.1086 | Buy Now |
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Bristol Electronics | Min Qty: 3 | 77 |
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$1.5000 / $2.4000 | Buy Now |
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Quest Components | 61 |
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$1.2000 / $3.2000 | Buy Now | |
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Ameya Holding Limited | MOSFET N-CH 60V 100A 8VSON | 34197 |
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RFQ | |
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ComSIT USA | 60V N-CHANNEL NEXFET POWER MOSFET Power Field-Effect Transistor, 28A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 150 |
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RFQ | |
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LCSC | 60V 100A 2.2m10V28A 2.3V250uA 1PCSNChannel VSON-8(5x6) MOSFETs ROHS | 1226 |
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$1.0663 / $1.8576 | Buy Now |
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Win Source Electronics | 60V N-Channel NexFET Power MOSFETs | 285714 |
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$1.3190 / $1.9790 | Buy Now |
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CSD18540Q5B
Texas Instruments
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Datasheet
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Compare Parts:
CSD18540Q5B
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 20 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 188 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |