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60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 175
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-37963-1-ND
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DigiKey | MOSFET N-CH 60V 100A 8VSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3783 In Stock |
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$1.9459 / $2.9400 | Buy Now |
DISTI #
595-CSD18540Q5BT
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Mouser Electronics | MOSFET 60V,NCh NexFET Pwr MOSFET RoHS: Compliant | 4588 |
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$1.2300 / $2.9400 | Buy Now |
DISTI #
CSD18540Q5BT
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TME | Transistor: N-MOSFET, unipolar, 60V, 100A, 188W, VSON-CLIP8, 5x6mm Min Qty: 1 | 0 |
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$1.8200 / $2.5400 | RFQ |
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Ameya Holding Limited | VSON-CLIP 8/60V, N-Channel NexFET(TM) Power MOSFET | 1762 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 60V 100A 8VSON / Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R | 285600 |
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$1.3190 / $1.9790 | Buy Now |
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CSD18540Q5BT
Texas Instruments
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Datasheet
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CSD18540Q5BT
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 320 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 221 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 20 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 188 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |