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100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-47254-1-ND
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DigiKey | MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
961 In Stock |
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$2.0737 / $5.4700 | Buy Now |
DISTI #
595-CSD19536KTT
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Mouser Electronics | MOSFETs 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 RoHS: Compliant | 1219 |
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$2.1600 / $4.4400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 30 |
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$2.4317 / $4.8633 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 2 |
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$3.4500 | Buy Now |
DISTI #
CSD19536KTT
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TME | Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 375W, D2PAK Min Qty: 1 | 0 |
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$3.4600 / $5.1900 | RFQ |
DISTI #
C1S746203898557
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 499 |
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$2.4500 / $3.2200 | Buy Now |
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LCSC | 100V 200A 2.4m100A10V 375W 3.2V250uA 1 N-Channel TO-263-3 MOSFETs ROHS | 48 |
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$2.3144 / $3.5270 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 200A DDPAK | 30000 |
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$1.8060 / $2.7090 | Buy Now |
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CSD19536KTT
Texas Instruments
Buy Now
Datasheet
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CSD19536KTT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 806 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 61 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19536KTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19536KTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRLS4030TRL | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | CSD19536KTT vs AUIRLS4030TRL |
AUIRLS4030TRR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | CSD19536KTT vs AUIRLS4030TRR |
IRLS4030TRRPBF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | CSD19536KTT vs IRLS4030TRRPBF |
IRLS4030PBF | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3 | Infineon Technologies AG | CSD19536KTT vs IRLS4030PBF |
IRLS4030TRLPBF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | CSD19536KTT vs IRLS4030TRLPBF |