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Transistors Power Field-Effect Transistors CSD19536KTTT

Transistors
CSD19536KTTT
Texas Instruments
Description: 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175

Overview of CSD19536KTTT by Texas Instruments

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for CSD19536KTTT by Texas Instruments

Part # Manufacturer Description Stock Price Buy
DISTI # 296-41136-1-ND
DigiKey MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 875
In Stock
  • 1 $7.1000
  • 10 $4.7970
  • 50 $3.8108
  • 100 $3.4929
  • 150 $3.3308
  • 250 $3.1486
  • 350 $3.0406
  • 500 $2.9388
$2.9388 / $7.1000 Buy Now
DISTI # 595-CSD19536KTTT
Mouser Electronics MOSFETs 100V N-Channel NexFET Power MOSFET RoHS: Compliant 689
  • 1 $6.2900
  • 10 $5.2900
  • 50 $4.9800
  • 100 $4.2700
  • 250 $4.0300
  • 500 $3.7900
  • 1,000 $3.2500
  • 2,500 $3.0600
$3.0600 / $6.2900 Buy Now
Bristol Electronics   Min Qty: 1 134
  • 1 $5.1520
  • 6 $3.3488
  • 16 $2.5760
  • 50 $2.4044
  • 105 $2.2324
$2.2324 / $5.1520 Buy Now
Quest Components   107
  • 1 $6.9000
  • 6 $3.4500
  • 59 $3.2200
$3.2200 / $6.9000 Buy Now
Quest Components   27
  • 1 $8.2800
  • 5 $6.0720
  • 13 $5.5200
$5.5200 / $8.2800 Buy Now
DISTI # CSD19536KTTT
TME Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 375W, D2PAK Min Qty: 1 0
  • 1 $5.6800
  • 3 $5.3400
  • 10 $4.7900
  • 50 $4.3100
$4.3100 / $5.6800 RFQ
Win Source Electronics MOSFET N-CH 100V 200A TO263 / Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R 30004
  • 19 $2.7090
  • 45 $2.2230
  • 70 $2.1530
  • 96 $2.0840
  • 125 $2.0140
  • 167 $1.8060
$1.8060 / $2.7090 Buy Now

CAD Models for CSD19536KTTT by Texas Instruments
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Part Data Attributes for CSD19536KTTT by Texas Instruments
Parametric Data

CSD19536KTTT
Texas Instruments
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
TEXAS INSTRUMENTS INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
Texas Instruments
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
806 mJ
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
200 A
Drain-source On Resistance-Max
0.0028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
61 pF
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. CSD19536KTTT
    Texas Instruments
    100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
    VS

Alternate Parts for CSD19536KTTT

This table gives cross-reference parts and alternative options found for CSD19536KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19536KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
AUIRLS4030TRL Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030TRL
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier CSD19536KTTT vs AUIRLS4030TRR
IRLS4030TRRPBF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG CSD19536KTTT vs IRLS4030TRRPBF
IRLS4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3 Infineon Technologies AG CSD19536KTTT vs IRLS4030PBF
IRLS4030TRLPBF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG CSD19536KTTT vs IRLS4030TRLPBF
Part Number Description Manufacturer Compare
AUIRLS4030-7TRL Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030-7TRL
IRLS4030-7PPBF Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 Infineon Technologies AG CSD19536KTTT vs IRLS4030-7PPBF
IRLS4030-7PPBF Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 International Rectifier CSD19536KTTT vs IRLS4030-7PPBF
AUIRLS4030-7TRL Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier CSD19536KTTT vs AUIRLS4030-7TRL
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier CSD19536KTTT vs AUIRLS4030-7P
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030-7P
IRLS4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, DPAK-3 Infineon Technologies AG CSD19536KTTT vs IRLS4030PBF
AUIRLS4030TRL Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030TRL
IRLB4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG CSD19536KTTT vs IRLB4030PBF
IRLSL4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, IPAK-3 Infineon Technologies AG CSD19536KTTT vs IRLSL4030PBF

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