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-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-47758-1-ND
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DigiKey | MOSFET P-CH 12V 1.8A 3PICOSTAR Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
48273 In Stock |
|
$0.0517 / $0.4300 | Buy Now |
DISTI #
595-CSD23280F3
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Mouser Electronics | MOSFET -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 RoHS: Compliant | 15943 |
|
$0.0490 / $0.3900 | Buy Now |
DISTI #
V72:2272_14839706
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Arrow Electronics | Trans MOSFET P-CH 12V 2.9A 3-Pin PicoStar T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks Date Code: 2252 Container: Cut Strips | Americas - 2150 |
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$0.0487 / $0.3354 | Buy Now |
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Ameya Holding Limited | Trans MOSFET P-CH 12V 1.8A 3-Pin PICOSTAR T/R | 100 |
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RFQ | |
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Sense Electronic Company Limited | PICOSTAR-3 | 20000 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 12V 1.8A 3PICOSTAR / P-Channel 12 V 1.8A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR | 24800 |
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$0.0680 / $0.1020 | Buy Now |
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CSD23280F3
Texas Instruments
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Datasheet
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CSD23280F3
Texas Instruments
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | LGA, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.40 | |
Date Of Intro | 2016-04-12 | |
Samacsys Manufacturer | Texas Instruments | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | -1.8 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 11.1 pF | |
JESD-30 Code | R-PBGA-B3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Pulsed Drain Current-Max (IDM) | 11.4 A | |
Surface Mount | YES | |
Terminal Finish | Nickel/Gold (Ni/Au) | |
Terminal Form | BUTT | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD23280F3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD23280F3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD23280F3T | -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 | Texas Instruments | CSD23280F3 vs CSD23280F3T |