Part Details for DDB6U75N16YRBOMA1 by Eupec Gmbh & Co Kg
Overview of DDB6U75N16YRBOMA1 by Eupec Gmbh & Co Kg
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for DDB6U75N16YRBOMA1
DDB6U75N16YRBOMA1 CAD Models
DDB6U75N16YRBOMA1 Part Data Attributes
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DDB6U75N16YRBOMA1
Eupec Gmbh & Co Kg
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Datasheet
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DDB6U75N16YRBOMA1
Eupec Gmbh & Co Kg
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | EUPEC GMBH & CO KG | |
Package Description | MODULE-24 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 69 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
JESD-30 Code | R-XUFM-X24 | |
Number of Elements | 1 | |
Number of Terminals | 24 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 670 ns | |
Turn-on Time-Nom (ton) | 175 ns |
Alternate Parts for DDB6U75N16YRBOMA1
This table gives cross-reference parts and alternative options found for DDB6U75N16YRBOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DDB6U75N16YRBOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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DDB6U75N16W1R_B11 | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27 | Infineon Technologies AG | DDB6U75N16YRBOMA1 vs DDB6U75N16W1R_B11 |
DDB6U75N16W1RBOMA1 | Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, MODULE-27 | Infineon Technologies AG | DDB6U75N16YRBOMA1 vs DDB6U75N16W1RBOMA1 |