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Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8417
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Newark | Mosfet, N-Ch, 30V, 10A, To-252 Rohs Compliant: Yes |Diodes Inc. DMG4800LK3-13 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1938 |
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$0.2610 / $0.6260 | Buy Now |
DISTI #
40AJ6048
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Newark | Mosfet N-Ch 30V 10A To252-3 |Diodes Inc. DMG4800LK3-13 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3260 / $0.6930 | Buy Now |
DISTI #
DMG4800LK3-13DICT-ND
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DigiKey | MOSFET N-CH 30V 10A TO252-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9955 In Stock |
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$0.1641 / $0.5600 | Buy Now |
DISTI #
DMG4800LK3-13
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Avnet Americas | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: DMG4800LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 45000 Factory Stock |
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$0.1187 | Buy Now |
DISTI #
621-DMG4800LK3-13
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Mouser Electronics | MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A RoHS: Compliant | 10967 |
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$0.1880 / $0.5600 | Buy Now |
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Future Electronics | Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1400 / $0.1520 | Buy Now |
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Future Electronics | Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1400 / $0.1520 | Buy Now |
DISTI #
DMG4800LK3-13
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TME | Transistor: N-MOSFET, unipolar, 30V, 6.5A, 1.71W, TO252 Min Qty: 1 | 0 |
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$0.1580 / $0.4150 | RFQ |
DISTI #
DMG4800LK3-13
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Avnet Silica | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) TO-252 T/R (Alt: DMG4800LK3-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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LCSC | 30V 10A 1.71W 17m9A10V 1.6V250uA 1 N-Channel TO-252 MOSFETs ROHS | 10 |
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$0.3132 / $0.5303 | Buy Now |
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DMG4800LK3-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMG4800LK3-13
Diodes Incorporated
Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.71 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |