Part Details for DMN3016LSS-13 by Diodes Incorporated
Overview of DMN3016LSS-13 by Diodes Incorporated
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMN3016LSS-13
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AK8538
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Newark | Mosfet, N-Ch, 30V, 10.3A, Soic Rohs Compliant: Yes |Diodes Inc. DMN3016LSS-13 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2365 |
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$0.2060 / $0.4800 | Buy Now |
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DISTI #
DMN3016LSS-13DICT-ND
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DigiKey | MOSFET N-CH 30V 10.3A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6173 In Stock |
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$0.1484 / $0.7800 | Buy Now |
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DISTI #
DMN3016LSS-13
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Avnet Americas | Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R - Tape and Reel (Alt: DMN3016LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 102500 Factory Stock |
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$0.1227 | Buy Now |
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DISTI #
621-DMN3016LSS-13
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Mouser Electronics | MOSFETs 30V N-Ch Enh FET 20Vdss 1.5W RoHS: Compliant | 7031 |
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$0.1480 / $0.4300 | Buy Now |
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Future Electronics | DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1300 / $0.1410 | Buy Now |
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Future Electronics | DMN3016LSS Series 30 V 10.3 A N-Channel Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.1300 / $0.1410 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 30V, 0.012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1256 |
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$0.2925 / $0.9750 | Buy Now |
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DISTI #
DMN3016LSS-13
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TME | Transistor: N-MOSFET, unipolar, 30V, 9.5A, Idm: 80A, 2W, SO8 Min Qty: 1 | 0 |
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$0.1930 / $0.4240 | RFQ |
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DISTI #
DMN3016LSS-13
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Avnet Asia | Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R (Alt: DMN3016LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days | 0 |
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$0.1050 / $0.1174 | Buy Now |
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DISTI #
DMN3016LSS-13
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Avnet Silica | Trans MOSFET N-CH 30V 10.3A 8-Pin SO T/R (Alt: DMN3016LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMN3016LSS-13
DMN3016LSS-13 CAD Models
DMN3016LSS-13 Part Data Attributes
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DMN3016LSS-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN3016LSS-13
Diodes Incorporated
Power Field-Effect Transistor, 9.3A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 25 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for DMN3016LSS-13
This table gives cross-reference parts and alternative options found for DMN3016LSS-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN3016LSS-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSZ130N03LSGATMA1 | Power Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | DMN3016LSS-13 vs BSZ130N03LSGATMA1 |