There are no models available for this part yet.
Overview of DMNH6021SPDWQ-13 by Diodes Incorporated
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Price & Stock for DMNH6021SPDWQ-13 by Diodes Incorporated
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
DMNH6021SPDWQ-13DI-ND
|
DigiKey | MOSFET 2N-CH 60V 8.2A PWRDI50 Min Qty: 2500 Lead time: 28 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.6524 / $0.6655 | Buy Now | |
|
DISTI #
DMNH6021SPDWQ-13
|
Avnet Americas | Trans MOSFET Array N-CH 60V 32A 8-Pin PowerDI T/R - Tape and Reel (Alt: DMNH6021SPDWQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 28 Weeks, 0 Days Container: Reel | 2500 Factory Stock |
|
$0.8697 | Buy Now | |
|
DISTI #
621-DMNH6021SPDWQ-13
|
Mouser Electronics | MOSFETs MOSFET BVDSS 41V-60V RoHS: Compliant | 0 |
|
$0.7280 | Order Now | |
| Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 28 Weeks | 0 |
|
$0.6870 | Buy Now | ||
|
DISTI #
DMNH6021SPDWQ-13
|
Avnet Silica | (Alt: DMNH6021SPDWQ-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 30 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for DMNH6021SPDWQ-13 by Diodes Incorporated
Part Data Attributes for DMNH6021SPDWQ-13 by Diodes Incorporated
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
DIODES INC
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
28 Weeks
|
|
Samacsys Manufacturer
|
Diodes Incorporated
|
|
Additional Feature
|
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas)
|
64 mJ
|
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Case Connection
|
DRAIN
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Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
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Drain Current-Max (ID)
|
32 A
|
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Drain-source On Resistance-Max
|
0.025 Ω
|
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
69 pF
|
|
JESD-30 Code
|
R-PDSO-F8
|
|
JESD-609 Code
|
e3
|
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Moisture Sensitivity Level
|
3
|
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Number of Elements
|
2
|
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Number of Terminals
|
8
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Operating Mode
|
ENHANCEMENT MODE
|
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Operating Temperature-Max
|
175 °C
|
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Operating Temperature-Min
|
-55 °C
|
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Package Body Material
|
PLASTIC/EPOXY
|
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Package Shape
|
RECTANGULAR
|
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Package Style
|
SMALL OUTLINE
|
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Peak Reflow Temperature (Cel)
|
260
|
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Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation-Max (Abs)
|
2.8 W
|
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Pulsed Drain Current-Max (IDM)
|
80 A
|
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Reference Standard
|
AEC-Q101; MIL-STD-202
|
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Surface Mount
|
YES
|
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Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
FLAT
|
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Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|